Method and device for controlling light emitting intensity of semiconductor laser element

OPT OpenIR > 半导体激光器专利数据库

	Method and device for controlling light emitting intensity of semiconductor laser element
其他题名	Method and device for controlling light emitting intensity of semiconductor laser element
	HAYASHI SHIGEO
	1990-08-06
专利权人	株式会社リコー
公开日期	1990-08-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To control light emitting intensity in the line unit of a recording image light beam with accuracy by changing the command value of the light emitting intensity step by step, also calculating the deviation between a detection value and the set value of the light emitting intensity and setting the command value so that the smaller deviation may be kept in the relation between both. CONSTITUTION:In a control part 1, at the point of time of starting to control (t0), the command value CI is made to be '0' and the output intensity of a laser diode 2 is set '0' at an initial setting, since then, the command value CI is made to rise step by step with a fixed time cycle. And, when the output intensity exceeds a prescribed value LR at the point of time (t1), the command value CI is made to be stepped down by one step so as to become smaller than the prescribed value LR, then, the command value is made to be stepped up by one step so as to become larger than the prescribed value LR; the action is repeatedly performed by the prescribed number of times. When the action for reversing the relation between the sizes of the prescribed value LR and the command value CI by the prescribed number of times is finished, at the point of the time (t2) when the action is finished, the command value CI is set so that the state in which the smaller deviation is kept, the deviation ERp when the output intensity is larger than the prescribed value LR or the deviation EPm when the output intensity is smaller than the prescribed value LR may be secured.
其他摘要	用途：通过逐步改变发光强度的指令值，精确控制记录图像光束的线单位的发光强度，同时计算检测值与发光强度设定值之间的偏差并设置命令值，使得较小的偏差可以保持在两者之间的关系中。组成：在控制部分1，在开始控制（t0）的时间点，命令值CI为'0'，激光二极管2的输出强度在初始设置时设置为'0'从那时起，命令值CI以固定的时间周期逐步上升。并且，当输出强度在时间点（t1）超过规定值LR时，使命令值CI降低一步以使其小于规定值LR，然后，使命令值逐步升高一步以使其大于规定值LR;该动作重复执行规定的次数。当完成将规定值LR和命令值CI的大小之间的关系反转规定次数的动作时，在动作结束的时间（t2）的时刻，设定命令值CI因此，保持较小偏差的状态，当输出强度大于规定值LR时的偏差ERp或当输出强度小于规定值LR时的偏差EPm可以是担保。
主权项	-
申请日期	1989-02-23
专利号	JP1990197870A
专利状态	失效
申请号	JP1989041879
公开（公告）号	JP1990197870A
IPC 分类号	B41J2/44 \| G03G15/04 \| H01S5/06 \| H01S3/103
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/59617
专题	半导体激光器专利数据库
作者单位	株式会社リコー
推荐引用方式 GB/T 7714	HAYASHI SHIGEO. Method and device for controlling light emitting intensity of semiconductor laser element. JP1990197870A[P]. 1990-08-06.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1990197870A.PDF（513KB）	专利		开放获取	CC BY-NC-SA	请求全文