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Semiconductor laser control device
其他题名Semiconductor laser control device
HORIBATAKE KATSUSHI
1987-01-31
专利权人MITA IND CO LTD
公开日期1987-01-31
授权国家日本
专利类型发明申请
摘要PURPOSE:To adjust automatically a laser output, and to hold a prescribed image density by detecting a photosensitive body temperature which is written by a semiconductor laser, and controlling a reference signal. CONSTITUTION:A part of an output light of a semiconductor laser LD is photodetected by a photodiode PD, and a current flowing to the diode PD is detected by a current detecting resistance R This detecting signal is applied to a sample holding circuit IC3 through operational amplifiers IC1, IC2, and held in a holding capacitor C An output voltage Ec of this circuit IC3, and a voltage Es of a reference voltage setting variable resistance VR are inputted to a differential amplifier IC4. By this amplifier IC4, a difference of the voltage Ec and Es is amplified, and by its output, a base of a transistor TR which has been connected in series to the laser ID is controlled. Also, by a thermistor RT which has been connected to a variable resistance VR, a temperature of a photosensitive body is detected, and in accordance with its temperature, the voltage Es is changed, a laser LD output is adjusted automatically, and a desired image density is held.
其他摘要用途:通过检测半导体激光器写入的感光体温度,控制参考信号,自动调节激光输出,保持规定的图像浓度。组成:半导体激光器LD的输出光的一部分由光电二极管PD光电检测,并且流过二极管PD的电流由电流检测电阻R1检测。该检测信号通过运算放大器IC1,IC2施加到采样保持电路IC3,并保持在保持电容器C1中。该电路IC3的输出电压Ec和参考电压设定可变电阻VR的电压Es被输入到差分放大器IC4。通过该放大器IC4,电压Ec和Es的差被放大,并且通过其输出,控制与激光ID串联连接的晶体管TR的基极。另外,通过连接到可变电阻VR的热敏电阻RT,检测感光体的温度,并根据其温度改变电压Es,自动调节激光LD输出,并获得所需图像。密度保持不变。
主权项-
申请日期1985-07-24
专利号JP1987023070A
专利状态失效
申请号JP1985163571
公开(公告)号JP1987023070A
IPC 分类号B41J2/44 | G03G15/00 | G03G15/04 | G06K15/12 | H01S5/068 | B41J3/00 | H01S3/133
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/59425
专题半导体激光器专利数据库
作者单位MITA IND CO LTD
推荐引用方式
GB/T 7714
HORIBATAKE KATSUSHI. Semiconductor laser control device. JP1987023070A[P]. 1987-01-31.
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