Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory

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	Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory
其他题名	Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory
	HAYAKAWA, JUN; YAMANOUCHI, MICHIHIKO
	2010-09-10
专利权人	HITACHI, LTD.
公开日期	2010-09-10
授权国家	世界知识产权组织
专利类型	发明申请
摘要	Provided are a tunnel magnetic recording element and a low-power-consumption volatile memory using the same with the occurrence of write error reduced when magnetic information is read out. When information is read out, an exchange-coupling magnetic field is modulated by the applying of electric field or the emission light to increase a damping constant α of a magnetic recording layer (2002), thereby reducing the rate of write error at the time of reading. A means that modulates the exchange-coupling magnetic field puts a multiferroics layer near the magnetic recording layer of the tunnel magnetic recording element and applies an electric field, or includes a laser diode in the magnetic recording layer via an antiferromagnetic layer and emits a laser beam. For writing, a spin transfer torque that is activated by the current flowing through a magnetic fixed layer, a tunnel barrier layer, and the magnetic recording layer is used. For reading, the direction of magnetization of the magnetic recording layer is electrically detected using the tunnel magneto-resistance effect.
其他摘要	提供了一种隧道磁记录元件和使用该隧道磁记录元件的低功耗易失性存储器，其中当读出磁信息时减少了写入错误的发生。当读出信息时，通过施加电场或发射光来调制交换耦合磁场，以增加磁记录层（2002）的阻尼常数α，从而降低写入时的写入误差率。读。调制交换耦合磁场的装置将多铁性层置于隧道磁记录元件的磁记录层附近并施加电场，或者通过反铁磁层在磁记录层中包括激光二极管并发射激光束。为了写入，使用由流过磁固定层，隧道阻挡层和磁记录层的电流激活的自旋转移扭矩。为了读取，使用隧道磁阻效应来电检测磁记录层的磁化方向。
主权项	-
申请日期	2009-03-06
专利号	WO2010100678A1
专利状态	未确认
申请号	PCT/JP2009/001017
公开（公告）号	WO2010100678A1
IPC 分类号	H01L27/105 \| H01L43/08 \| G11C11/15 \| H01L29/82 \| H01L21/8246
专利代理人	POLAIRE I.P.C.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/58401
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	HAYAKAWA, JUN,YAMANOUCHI, MICHIHIKO. Tunnel magnetic recording element, magnetic memory cell, and magnetic random access memory. WO2010100678A1[P]. 2010-09-10.