Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same

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	Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same
其他题名	Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same
	BURROUGHS, SCOTT; FISHER, BRENT; CARTER, JAMES
	2018-10-18
专利权人	SENSE PHOTONICS, INC.
公开日期	2018-10-18
授权国家	美国
专利类型	发明申请
摘要	A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
其他摘要	激光二极管包括下布拉格反射器层，有源区和上布拉格反射器层的半导体结构。上布拉格反射器层包括激光孔，该激光孔具有垂直于有源区表面取向的光轴。有源区包括第一材料，下布拉格反射器层包括第二材料，其中第一和第二材料的相应晶格结构彼此独立。还讨论了相关的激光器阵列和制造方法。
主权项	A laser diode, comprising: a semiconductor structure comprising a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer, the upper Bragg reflector layer comprising a lasing aperture having an optical axis oriented perpendicular to a surface of the active region, wherein the active region comprises a first material, wherein the lower Bragg reflector layer comprises a second material, and wherein respective lattice structures of the first and second materials are independent of one another.
申请日期	2018-04-12
专利号	US20180301865A1
专利状态	申请中
申请号	US15/951727
公开（公告）号	US20180301865A1
IPC 分类号	H01S5/026 \| G02B5/08 \| H01S3/02 \| G01S7/481 \| H01L25/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/57066
专题	半导体激光器专利数据库
作者单位	SENSE PHOTONICS, INC.
推荐引用方式 GB/T 7714	BURROUGHS, SCOTT,FISHER, BRENT,CARTER, JAMES. Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same. US20180301865A1[P]. 2018-10-18.