Xi'an Institute of Optics and Precision Mechanics,CAS
| Pseudomorphic layer in tunnel junction VCSEL | |
| 其他题名 | Pseudomorphic layer in tunnel junction VCSEL |
| RYOU, JAE-HYUN | |
| 2005-01-06 | |
| 专利权人 | FINISAR CORPORATION |
| 公开日期 | 2005-01-06 |
| 授权国家 | 美国 |
| 专利类型 | 发明申请 |
| 摘要 | A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof, and a second mirror stack over the tunnel junction. The pseudomorphically strained layer can be used to form a tunnel junction with a n-doped layer of InP or AlInAs, or with a lower bandgap material such as AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL. |
| 其他摘要 | 垂直腔表面发射激光器（VCSEL）包括铟基半导体合金衬底，衬底上的第一镜堆，在第一镜堆上具有多个量子阱的有源区，在有源区上方的隧道结，隧道结包括选自由富Al的InAlAs，AlAs，富含Ga的InGaAs，GaAs及其组合组成的组的化合物的p掺杂假晶应变层，以及在隧道结上的第二镜堆。假晶应变层可用于与InP或AlInAs的n掺杂层或与诸如AlInGaAs或InGaAsP的较低带隙材料形成隧道结。这种隧道结特别适用于长波长VCSEL。 |
| 主权项 | A vertical cavity surface emitting laser, comprising: an indium-based semiconductor alloy substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof; and a second mirror stack over the tunnel junction. |
| 申请日期 | 2003-07-03 |
| 专利号 | US20050002430A1 |
| 专利状态 | 失效 |
| 申请号 | US10/611992 |
| 公开（公告）号 | US20050002430A1 |
| IPC 分类号 | H01S5/042 | H01S5/183 | H01S5/00 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/56510 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | RYOU, JAE-HYUN. Pseudomorphic layer in tunnel junction VCSEL. US20050002430A1[P]. 2005-01-06. |
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