Epitaxial planarization of tunnel junction and alike vcsel array and method therefor

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	Epitaxial planarization of tunnel junction and alike vcsel array and method therefor
其他题名	Epitaxial planarization of tunnel junction and alike vcsel array and method therefor
	RIAZIAT, MAJID; PAO, YI-CHING; WU, TA-CHUNG
	2019-08-15
专利权人	OEPIC SEMICONDUCTORS, INC.
公开日期	2019-08-15
授权国家	美国
专利类型	发明申请
摘要	A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.
其他摘要	形成隧道结（TJ）垂直腔面发射激光器（VCSEL）阵列的方法包括在衬底上形成第一镜面器件;在第一镜装置上形成有源区;在有源区上形成第二镜器件的第一部分;在第二镜装置的第一部分上形成多个隧道结;通过外延过度生长形成第二镜器件的第二部分，第二镜器件的第二部分覆盖多个隧道结，其中TJ VCSEL阵列的各个VCSEL元件通过第二部分的外延过度生长电连接第二镜像设备。
主权项	A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprising: forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device formed on the active region; forming a plurality of tunnel junctions above the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.
申请日期	2019-02-12
专利号	US20190252858A1
专利状态	申请中
申请号	US16/273776
公开（公告）号	US20190252858A1
IPC 分类号	H01S5/183 \| H01S5/30
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/55441
专题	半导体激光器专利数据库
作者单位	OEPIC SEMICONDUCTORS, INC.
推荐引用方式 GB/T 7714	RIAZIAT, MAJID,PAO, YI-CHING,WU, TA-CHUNG. Epitaxial planarization of tunnel junction and alike vcsel array and method therefor. US20190252858A1[P]. 2019-08-15.