Power monitoring approach for vcsels and vcsel arrays

OPT OpenIR > 半导体激光器专利数据库

	Power monitoring approach for vcsels and vcsel arrays
其他题名	Power monitoring approach for vcsels and vcsel arrays
	JOHNSON, KLEIN L.; SANDQUIST, DAVID; BRENNER, MARY
	2019-07-18
专利权人	VIXAR, INC.
公开日期	2019-07-18
授权国家	美国
专利类型	发明申请
摘要	The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.
其他摘要	本公开涉及一种用于在相对紧凑的薄型封装中监视VCSEL或VCSEL阵列的输出功率的方法。本公开的VCSEL器件或VCSEL封装通常可以配置有光电二极管，用于监视一个或多个VCSEL的输出功率。在一些实施例中，一个或多个VCSEL器件可以布置在光电检测器之上或之上，使得光电检测器被配置为检测通过VCSEL的底部发射的光。在这样的实施例中，VCSEL器件可以具有图案化的底部金属层和/或蚀刻的衬底，以允许光在VCSEL的下方或后面通过到光电二极管。在其他实施例中，光电检测器可以布置在与一个或多个VCSEL相邻的基座上，并且可以被配置为检测经由漫射器反射的光以便监视输出功率。
主权项	A VCSEL device comprising: a light-generating quantum well active region; a first mirror layer arranged on a first side of the active region and configured to emit at least 50% of light generated by the active region; a second mirror layer arranged on a second side of the active region and configured to emit no more than 50% of light generated by the active region; a metal contact layer patterned with an opening aligned with a light emission direction of the VCSEL, the opening sized and configured to receive light emitted from the second mirror layer; and a photodiode arranged between the metal contact layer and a submount, the photodiode configured to receive light emitted from the second mirror layer.
申请日期	2018-11-29
专利号	US20190221997A1
专利状态	申请中
申请号	US16/204156
公开（公告）号	US20190221997A1
IPC 分类号	H01S5/0683 \| H01S5/022 \| H01S5/42
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/55383
专题	半导体激光器专利数据库
作者单位	VIXAR, INC.
推荐引用方式 GB/T 7714	JOHNSON, KLEIN L.,SANDQUIST, DAVID,BRENNER, MARY. Power monitoring approach for vcsels and vcsel arrays. US20190221997A1[P]. 2019-07-18.