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Method of bonding a substrate to a semiconductor light emitting device
其他题名Method of bonding a substrate to a semiconductor light emitting device
BASIN, GRIGORIY; EPLER, JOHN EDWARD; MARTIN, PAUL SCOTT
2014-07-10
专利权人LUMILEDS LLC
公开日期2014-07-10
授权国家美国
专利类型发明申请
摘要A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).
其他摘要根据本发明实施例的方法包括将柔性膜(48)定位在半导体发光器件的晶片上,每个半导体发光器件包括半导体结构(13),该半导体结构(13)包括夹在n型区域和n型区域之间的发光层。一个p型区域。半导体发光器件的晶片经由柔性膜(48)接合到基板(50)。在键合之后,柔性膜(48)与半导体结构(13)直接接触。该方法还包括在将晶片接合到衬底(50)之后分割晶片。
主权项A method comprising: positioning a flexible film over a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region, wherein the flexible film is formed separate from the wafer, then positioned over the wafer; bonding a substrate to the wafer of semiconductor light emitting devices via the flexible film, wherein after bonding the flexible film is in direct contact with the semiconductor structure; and after bonding the wafer to the substrate, dividing the wafer.
申请日期2012-07-30
专利号US20140193931A1
专利状态授权
申请号US14/131686
公开(公告)号US20140193931A1
IPC 分类号H01L33/48 | H01L33/00 | H01L33/50
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/54360
专题半导体激光器专利数据库
作者单位LUMILEDS LLC
推荐引用方式
GB/T 7714
BASIN, GRIGORIY,EPLER, JOHN EDWARD,MARTIN, PAUL SCOTT. Method of bonding a substrate to a semiconductor light emitting device. US20140193931A1[P]. 2014-07-10.
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