Semiconductor array device with single interconnection layer

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	Semiconductor array device with single interconnection layer
其他题名	Semiconductor array device with single interconnection layer
	FUJIWARA, HIROYUKI; TANINAKA, MASUMI; OZAWA, SUSUMU; KOIZUMI, MASUMI
	2004-02-25
专利权人	OKI DATA CORPORATION
公开日期	2004-02-25
授权国家	欧洲专利局
专利类型	发明申请
摘要	An array of semiconductor circuit elements such as light-emitting elements includes a semiconductor layer partially covered by a dielectric film. A first interconnecting pad such as a wire-bonding pad is electrically coupled by conductive paths passing through the semiconductor layer to electrodes of a first group of semiconductor circuit elements formed in the semiconductor layer. A second interconnecting pad such as a wire-bonding pad, formed on the dielectric film, is electrically coupled to electrodes of a second group of semiconductor circuit elements formed in the semiconductor layer by conductive paths insulated from the semiconductor layer by the dielectric film. The second conductive paths cross the first conductive paths at points at which the first conductive paths pass through the semiconductor layer, so that only a single layer of metal interconnecting lines is needed.
其他摘要	诸如发光元件的半导体电路元件阵列包括部分被介电膜覆盖的半导体层。诸如引线键合焊盘的第一互连焊盘通过穿过半导体层的导电路径电耦合到形成在半导体层中的第一组半导体电路元件的电极。形成在电介质膜上的诸如引线键合焊盘的第二互连焊盘通过由电介质膜与半导体层绝缘的导电路径电耦合到在半导体层中形成的第二组半导体电路元件的电极。第二导电路径在第一导电路径穿过半导体层的点处与第一导电路径交叉，从而仅需要单层金属互连线。
主权项	A semiconductor array device having a semiconductor layer disposed on a current-blocking layer, the semiconductor layer being partly covered by a dielectric film, the semiconductor layer being divided into a plurality of mutually isolated parts, the semiconductor array device comprising: a first interconnecting pad overlying and electrically coupled to one of the mutually isolated parts of the semiconductor layer; a second interconnecting pad disposed on the dielectric film; a first group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer, having respective electrodes that are electrically coupled to the first interconnecting pad by first conductive paths passing through the semiconductor layer; and a second group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer different from the parts in which the first group of semiconductor circuit elements are disposed, having respective electrodes that are electrically coupled to the second interconnecting pad by second conductive paths insulated from the semiconductor layer by the dielectric film, at least one of the second conductive paths crossing at least one of the first conductive paths at a point at which said one of the first conductive paths passes through the semiconductor layer.
申请日期	2003-07-31
专利号	EP1391936A2
专利状态	授权
申请号	EP2003017397
公开（公告）号	EP1391936A2
IPC 分类号	B41J2/45 \| H01L27/15 \| H01L33/08 \| H01L33/30 \| H01L33/44 \| H01L33/48
专利代理人	-
代理机构	BETTEN & RESCH
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/53089
专题	半导体激光器专利数据库
作者单位	OKI DATA CORPORATION
推荐引用方式 GB/T 7714	FUJIWARA, HIROYUKI,TANINAKA, MASUMI,OZAWA, SUSUMU,et al. Semiconductor array device with single interconnection layer. EP1391936A2[P]. 2004-02-25.

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