Fabrication method for mirrors for integrated optical devices

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	Fabrication method for mirrors for integrated optical devices
其他题名	Fabrication method for mirrors for integrated optical devices
	QUELLET, LUC; TREMBLAY, YVES
	2004-10-13
专利权人	DALSA SEMICONDUCTOR INC.
公开日期	2004-10-13
授权国家	欧洲专利局
专利类型	发明申请
摘要	A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600°C. The wafer surface is etched at a temperature between about 300 and 600°C to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.
其他摘要	在光子器件制造中在晶片上制造高反射镜的方法包括预热晶片以在约300和600℃之间的温度下除去吸附的挥发性污染物。在约300至600℃的温度下蚀刻晶片表面，以在等离子体存在下除去吸收的和化学吸收的污染物，以防止中毒。晶片表面被彻底冷却，以便在随后的金属沉积过程中降低撞击原子的表面迁移率。然后在吸气层的冷却晶片上进行沉积，以吸收氢，氧和氮。然后将金属反射层沉积在沉积室中，最后从沉积室移除晶片以防止过度的体氧化。
主权项	A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices, comprising the steps of: preheating a wafer to remove adsorbed volatile contaminants at a temperature between 300 and 600°C; etching the wafer surface at a temperature between 300 and 600°C to remove absorbed and chemically absorbed contaminants in the presence of a glow-discharge to reduce poisoning; thoroughly cooling the wafer surface so as to as reduce the surface mobility of the impinging metal atoms during a subsequent metallic deposition; carrying out a deposition on the cooled wafer of a gettering layer for gettering at least one contaminant selected from the group consisting of hydrogen, oxygen and nitrogen; depositing a metallic reflective layer in a deposition chamber; and removing the wafer from the deposition chamber to prevent excessive bulk oxidation.
申请日期	2002-11-18
专利号	EP1312949A3
专利状态	授权
申请号	EP2002102600
公开（公告）号	EP1312949A3
IPC 分类号	G02B1/10 \| G02B6/34 \| G02B6/124
专利代理人	-
代理机构	HARDING, RICHARD PATRICK
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/52911
专题	半导体激光器专利数据库
作者单位	DALSA SEMICONDUCTOR INC.
推荐引用方式 GB/T 7714	QUELLET, LUC,TREMBLAY, YVES. Fabrication method for mirrors for integrated optical devices. EP1312949A3[P]. 2004-10-13.

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