Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate

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	Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate
其他题名	Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate
	LIU, ANSHENG; PANICCIA, MARIO J.; NICOLAESCU, REMUS; JONES, RICHARD
	2002-12-26
专利权人	INTEL CORPORATION
公开日期	2002-12-26
授权国家	美国
专利类型	发明申请
摘要	A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity.
其他摘要	一种基于半导体的激光调谐方法和装置。在本发明的一个方面，根据本发明实施例的装置包括设置在半导体衬底中的增益介质。激光腔设置在半导体衬底中并且光学耦合到增益介质。第一反射器限定激光腔的一端。第一反射器包括设置在半导体衬底中的第一可调布拉格光栅。第一可调布拉格光栅包括沿半导体衬底的第一多个硅和多晶硅界面，使得沿布拉格光栅存在第一多个折射率的扰动。第一可调布拉格光栅选择性地反射具有可调中心波长的光，以通过在激光腔中具有可调中心波长的受激发射来发光。第二反射器限定激光腔的另一端。
主权项	An apparatus, comprising: a gain medium disposed in a semiconductor substrate; a laser cavity disposed in the semiconductor substrate, the laser cavity optically coupled to the gain medium; a first reflector defining one end of the laser cavity, the first reflector including a first tunable Bragg grating disposed in the semiconductor substrate, the first tunable Bragg grating including a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the first tunable Bragg grating, the first tunable Bragg grating to selectively reflect light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity; and a second reflector defining an other end of the laser cavity.
申请日期	2001-09-28
专利号	US20020197013A1
专利状态	授权
申请号	US09/967445
公开（公告）号	US20020197013A1
IPC 分类号	G02B6/12 \| G02B6/124 \| G02F1/01 \| G02F1/025 \| G02B6/34 \| G02B6/26 \| H01S3/08
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/52550
专题	半导体激光器专利数据库
作者单位	INTEL CORPORATION
推荐引用方式 GB/T 7714	LIU, ANSHENG,PANICCIA, MARIO J.,NICOLAESCU, REMUS,et al. Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate. US20020197013A1[P]. 2002-12-26.