Heat dissipating IC devices

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	Heat dissipating IC devices
其他题名	Heat dissipating IC devices
	MACRIS, CHRIS
	2002-09-26
专利权人	MACRIS CHRIS
公开日期	2002-09-26
授权国家	美国
专利类型	发明申请
摘要	Heat dissipating IC devices including at least one IC die comprising a semiconductor substrate with circuitry which utilize thermoelectric effects to more effectively dissipate thermal energy from electronic circuits.
其他摘要	散热IC器件包括至少一个IC管芯，该IC管芯包括具有电路的半导体衬底，该电路利用热电效应来更有效地耗散来自电子电路的热能。
主权项	A heat dissipating IC device comprising: at least one IC die comprising a semiconductor substrate including at least one circuitry layer with a hot region on at least one substrate face, a backside and a perimeter; a doped region diffused within the semiconductor substrate backside thereby creating a depletion layer between the substrate and doped region; and a voltage connected to the doped region, whereby the charge carrier flow, through the doped region of the substrate, travels in a direction from the hot region on the semiconductor substrate face outward toward the perimeter of the substrate face.
申请日期	2001-08-10
专利号	US20020134419A1
专利状态	失效
申请号	US09/927276
公开（公告）号	US20020134419A1
IPC 分类号	H01L23/31 \| H01L23/38 \| H01L23/498 \| H01L35/04 \| H01L35/32 \| F25B21/02 \| H01L35/28
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/52519
专题	半导体激光器专利数据库
作者单位	MACRIS CHRIS
推荐引用方式 GB/T 7714	MACRIS, CHRIS. Heat dissipating IC devices. US20020134419A1[P]. 2002-09-26.