Frequency doubled semiconductor laser having heat spreader on SHG crystal

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	Frequency doubled semiconductor laser having heat spreader on SHG crystal
其他题名	Frequency doubled semiconductor laser having heat spreader on SHG crystal
	HUGHES, LAWRENCE, CHARLES, JR.; PIECH, GARRETT, A
	2012-02-02
专利权人	CORNING INCORPORATED
公开日期	2012-02-02
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A hybrid laser hybrid laser comprises a semiconductor laser (50) supported directly or indirectly on a package substrate (20), a frequency- doubling crystal (60) supported via a first surface thereof on a supporting surface of a thermally conductive support (40) connected to the package substrate, with the crystal positioned so as to be able to receive light from the laser, and a thermally conductive heat spreader element (80) mounted on a second surface of the crystal. The thermally conductive element has a thermal conductivity greater than a thermal conductivity of the crystal, desirably at least 100W/mK or even 300W/mK. The thermally conductive element is not connected to the package substrate or to the thermally conductive support. While the thermally conductive element or "heat spreader" does not act directly to cool the crystal by conducting heat away, it acts to increase the uniformity of the temperature of the crystal, allowing the crystal to achieve higher light conversion efficiencies while remaining within the constraints of the folded-path hybrid laser package. The preferred simple slab structure of the thermally conductive element allows for a very easily manufactured laser package and structure.
其他摘要	混合激光混合激光器包括直接或间接支撑在封装基板（20）上的半导体激光器（50），通过其第一表面支撑在导热支撑件（40）的支撑表面上的倍频晶体（60）连接到封装衬底，晶体定位成能够接收来自激光器的光，并且导热散热器元件（80）安装在晶体的第二表面上。导热元件的导热率大于晶体的导热率，理想的是至少100W / mK或甚至300W / mK。导热元件不连接到封装衬底或导热支撑件。虽然导热元件或“散热器”不直接通过传导热量来冷却晶体，但它可以增加晶体温度的均匀性，使晶体在保持限制的同时实现更高的光转换效率折叠路径混合激光器封装。导热元件的优选简单板结构允许非常容易制造的激光器封装和结构。
主权项	A hybrid laser comprising: a semiconductor laser supported directly or indirectly on a package substrate; a frequency-doubling crystal supported via a first surface thereof on a supporting surface of a thermally conductive support connected to the package substrate, the crystal positioned so as to be able to receive light from the laser; and a thermally conductive element mounted on a second surface of the crystal, the thermally conductive element having a thermal conductivity greater than a thermal conductivity of the crystal, the thermally conductive element not connected to the package substrate or to the thermally conductive support.
申请日期	2011-07-25
专利号	WO2012015724A1
专利状态	未确认
申请号	PCT/US2011/045154
公开（公告）号	WO2012015724A1
IPC 分类号	G02B26/08 \| H01S5/024 \| H01S5/00 \| G02F1/377 \| G02B6/42 \| H01S5/24
专利代理人	BEAN, GREGORY, V.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51697
专题	半导体激光器专利数据库
作者单位	CORNING INCORPORATED
推荐引用方式 GB/T 7714	HUGHES, LAWRENCE, CHARLES, JR.,PIECH, GARRETT, A. Frequency doubled semiconductor laser having heat spreader on SHG crystal. WO2012015724A1[P]. 2012-02-02.