Light emitting and lasing transistor devices and methods

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	Light emitting and lasing transistor devices and methods
其他题名	Light emitting and lasing transistor devices and methods
	FENG, MILTON; HOLONYAK, NICK, JR.; WALTER, GABRIEL; THEN, HAN, WUI
	2010-11-18
专利权人	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
公开日期	2010-11-18
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
其他摘要	一种用于从半导体器件产生光发射的方法包括以下步骤：提供设置在半导体发射极区和半导体集电极区之间的半导体基极区，该半导体基极区形成与基极区相邻的隧道结;在基区中提供具有量子尺寸效应的区域;提供分别与发射极区，基极区和集电极区耦合的发射极端子，基极端子和集电极端子;并且相对于发射极端子，基极端子和集电极端子施加电信号以产生来自基极区域的光发射。
主权项	A method for producing light emission from a semiconductor device, comprising the steps of: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent said base region; providing, in said base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with said emitter region, said base region, and said collector region; and applying electrical signals with respect to said emitter terminal, said base terminal and said collector terminal to produce said light emission from said base region.
申请日期	2010-01-22
专利号	WO2010087948A3
专利状态	未确认
申请号	PCT/US2010/000161
公开（公告）号	WO2010087948A3
IPC 分类号	H01S5/20 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51684
专题	半导体激光器专利数据库
作者单位	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
推荐引用方式 GB/T 7714	FENG, MILTON,HOLONYAK, NICK, JR.,WALTER, GABRIEL,et al. Light emitting and lasing transistor devices and methods. WO2010087948A3[P]. 2010-11-18.

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