Light emitting and lasing semiconductor devices and methods

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	Light emitting and lasing semiconductor devices and methods
其他题名	Light emitting and lasing semiconductor devices and methods
	HOLONYAK, JR., NICK; FENG, MILTON; WALTER, GABRIEL; JAMES, ADAM
	2010-02-11
专利权人	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
公开日期	2010-02-11
授权国家	美国
专利类型	发明申请
摘要	A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.
其他摘要	一种用于响应电信号产生光发射的双端半导体器件，包括：无端子半导体基区，设置在半导体发射区和半导体集电区之间，所述半导体集电区具有与所述基区相邻的隧道结;其中具有区域的基区具有量子尺寸效应;发射极端子和集电极端子分别与发射极区域和集电极区域耦合;由此，相对于发射极和集电极端子施加电信号导致来自基极区域的光发射。电信号的施加可用于反向偏置隧道结。在隧道结处产生的空穴在基极区域中与电子流入基极区域重新组合，从而产生光发射。表现出量子尺寸效应的区域可用于辅助重组。
主权项	A two terminal semiconductor device for producing light emission in response to electrical signals, comprising: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; said base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with said emitter region and said collector region; whereby application of said electrical signals with respect to said emitter and collector terminals, causes light emission from said base region.
申请日期	2008-10-10
专利号	US20100034228A1
专利状态	授权
申请号	US12/287697
公开（公告）号	US20100034228A1
IPC 分类号	H01S5/00 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51656
专题	半导体激光器专利数据库
作者单位	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
推荐引用方式 GB/T 7714	HOLONYAK, JR., NICK,FENG, MILTON,WALTER, GABRIEL,et al. Light emitting and lasing semiconductor devices and methods. US20100034228A1[P]. 2010-02-11.