반도체 소자 및 그 제조 방법, 및, 반도체 레이저 및 그제조 방법

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	반도체 소자 및 그 제조 방법, 및, 반도체 레이저 및 그제조 방법
其他题名	반도체 소자 및 그 제조 방법, 및, 반도체 레이저 및 그제조 방법
	와시노류; 기까와다께시; 사꾸마야스시; 오까모또가오루
	2007-06-12
专利权人	니혼 오클라로 가부시키가이샤
公开日期	2007-06-12
授权国家	韩国
专利类型	发明申请
摘要	The semiconductor fabrication technique possible to prevent the electrode exfoliation generated in the die bonding or the wire bonding is provided. The electrode in the surface of the semiconductor substrate or the rear side may be referred to the structure which is semiconductor device having and in which the amorphous silicon layer (106) in which hydrogen is not added between the electrode (107) and semiconductor substrate (101) is inserted. Moreover, in the interface of the insulating layer (103) and electrode (105), and the interface of the semiconductor substrate and insulating layer, the amorphous silicon layer (104) is inserted. Moreover, in the semiconductor laser having the insulating layer consisting of the reflective film in the oscillation face side of light, and the insulating layer among consisting of the multilayer reflection film in the non percussion true face, it is applicable to the similarly. The semiconductor laser, the oscillation, the amorphous, the wire bonding, the electrode exfoliation, the semiconductor device .
其他摘要	提供了可以防止在管芯键合或引线键合中产生的电极剥落的半导体制造技术。半导体衬底表面中的电极或后侧可以称为具有并且其中在电极（107）和半导体衬底之间没有添加氢的非晶硅层（106）的半导体器件的结构（插入101）。此外，在绝缘层（103）和电极（105）的界面以及半导体衬底和绝缘层的界面中，插入非晶硅层（104）。此外，在具有由光的振动面侧的反射膜构成的绝缘层的半导体激光器和由非冲击真面中的多层反射膜构成的绝缘层中，可以类似地应用。半导体激光器，振荡，非晶，引线键合，电极剥离，半导体器件。
主权项	Semiconductor device called the structure in which the insulating layer is formed between electrode and semiconductor substrate and the amorphous silicon layer in which hydrogen is not added is inserted into the interface of the interface of the electrode and insulating layer and insulating layer and semiconductor substrate it is the semiconductor device having electrode in at least one among the surface of the semiconductor substrate and rear side.
申请日期	2006-08-17
专利号	KR1020070059905A
专利状态	失效
申请号	KR1020060077619
公开（公告）号	KR1020070059905A
IPC 分类号	H01S5/00 \| H01S5/347 \| H01L31/00
专利代理人	CHANG, SOO KIL \| KOO, YEONG CHANG \| LEE, JUNG HEE
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/51541
专题	半导体激光器专利数据库
作者单位	니혼 오클라로 가부시키가이샤
推荐引用方式 GB/T 7714	와시노류,기까와다께시,사꾸마야스시,et al. 반도체 소자 및 그 제조 방법, 및, 반도체 레이저 및 그제조 방법. KR1020070059905A[P]. 2007-06-12.

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