Refractive index modulation type optical modulator

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	Refractive index modulation type optical modulator
其他题名	Refractive index modulation type optical modulator
	IKEDA TATSURO
	1992-10-15
专利权人	FUJITSU LTD
公开日期	1992-10-15
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To generate large optical modulation effect with a low driving voltage and to realize optical modulation which is large in extinction ratio as to the refractive index modulation type optical modulator which is used for an optical communication or optical information processing, etc., and performs high-speed operation. CONSTITUTION:Quantum well layer units each consisting of a 1st quantum well layer W1, a 1st barrier layer B1 which contacts the 1st quantum well layer W1 and has lower electron energy at a point X or L than at a point GAMMA, and a 2nd quantum well layer W2 which contacts the 1st barrier layer B1 and is less in layer thickness than the 1st quantum well layer W1 or small in electron affinity and large in band gap energy are laminated periodically across 2nd barrier layers B2 which are enough to inhibit them from being bonded to adjacent quantum well layer units; and a voltage is applied to the quantum well layers to eliminate excitons and the refractive index to wavelength nearby an exciton peak is varied to modulate light.
其他摘要	用途：用于产生低驱动电压的大光调制效应，并实现消光比大的光调制，用于光通信或光信息处理等的折射率调制型光调制器，并执行高速运转。组成：量子阱层单元，每个由第一量子阱层W1，第一阻挡层B1和第一量子阱层W1接触，并且在点X或L处具有比在点GAMMA处更低的电子能量，以及第二量子与第一阻挡层B1接触并且层厚度小于第一量子阱层W1或者电子亲和力小且带隙能量小的阱层W2周期性地层叠在第二阻挡层B2上，这足以阻止它们与相邻的量子阱层单元结合;并且向量子阱层施加电压以消除激子，并且改变激子峰附近的波长的折射率以调制光。
主权项	-
申请日期	1991-03-20
专利号	JP1992291316A
专利状态	失效
申请号	JP1991080399
公开（公告）号	JP1992291316A
IPC 分类号	G02F1/015 \| G02F1/017 \| H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/50686
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	IKEDA TATSURO. Refractive index modulation type optical modulator. JP1992291316A[P]. 1992-10-15.

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