Xi'an Institute of Optics and Precision Mechanics,CAS
Forming tungsten structures. | |
其他题名 | Forming tungsten structures. |
DEPPE DENNIS GLENN; FELDMAN LEONARD CECIL; KOPF ROSE FASANO; SCHUBERT ERDMANN FREDERICK; TU LI-WEI; ZYDZIK GEORGE JOHN | |
1995-04-15 | |
专利权人 | AT&T CORP. |
公开日期 | 1995-09-18 |
授权国家 | 新加坡 |
专利类型 | 发明申请 |
摘要 | This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer (14), a bottom (rear) mirror (12) and a top (front) mirror (17), and a front and rear electrodes (17,18) for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer (17) which also acts as the front electrode. The metal layer is upon a highly doped layer (16) forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiences on the order of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology. |
其他摘要 | 本发明是一种半导体垂直腔表面发射激光器,包括具有有源层(14),底(后)反射镜(12)和顶(前)反射镜(17)的激光腔,以及前后电极(17) 18)用于在基本平行于光学传播方向的方向上施加激励电流。根据本发明,前镜包括薄的半透明金属层(17),其也用作前电极。金属层位于高掺杂层(16)上,形成非合金欧姆接触。金属选自Ag和Al,并且沉积的厚度范围为5至55nm。 VCSEL是半导体器件,其中半导体材料是III-V或II-VI化合物半导体。对于具有GaAs有源层的VCSEL,来自前金属镜/电极侧的光输出产生高达54%的高外部差分量子效率。这是VCSEL结构中获得的最高量子效率。对于现有技术的VCSEL结构,量子效率大约为10%至30%。 VCSEL适用于利用平面技术的制造。 |
申请日期 | 1991-05-10 |
专利号 | SG31195G |
专利状态 | 失效 |
申请号 | SG199590311 |
公开(公告)号 | SG31195G |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S5/183 | H01S3/085 | H01S3/025 | H01L21/00 | H01L21/308 | H01L23/52 |
专利代理人 | - |
代理机构 | HAQ & NAMAZIE PARTNERSHIP | DREW & NAPIER LLC |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/48880 |
专题 | 半导体激光器专利数据库 |
作者单位 | AT&T CORP. |
推荐引用方式 GB/T 7714 | DEPPE DENNIS GLENN,FELDMAN LEONARD CECIL,KOPF ROSE FASANO,et al. Forming tungsten structures.. SG31195G[P]. 1995-04-15. |
条目包含的文件 | 条目无相关文件。 |
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