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半導體雷射,半導體雷射之製造方法及半導體雷射之安裝方法
Alternative Title半導體雷射,半導體雷射之製造方法及半導體雷射之安裝方法
鹽澤秀夫; 山本善生; 野野村敏幸; 福岡和雄
2002-10-21
Rights Holder東芝股份有限公司
Date Available2002-10-21
Country中国台湾
Subtype授权发明
Abstract防止半導體雷射之端面保護膜之脫落。藉由於p型InGaP蝕刻停止層5上,形成p型 InGaA1P脊形帶狀光波導層6之外,並形成p型 InGaA1P脊形帶狀層6a,於光波導隆起部13之兩側形成光非波導隆起部13a。圖示請參照第1圖。
Other Abstract防止半導體雷射之端面保護膜之脫落。藉由於p型InGaP蝕刻停止層5上,形成p型 InGaA1P脊形帶狀光波導層6之外,並形成p型 InGaA1P脊形帶狀層6a,於光波導隆起部13之兩側形成光非波導隆起部13a。圖示請參照第1圖。
Application Date2001-09-10
Patent NumberTW507407B
Status失效
Application NumberTW090122354
Open (Notice) NumberTW507407B
IPC Classification NumberH01S5/02 | H01S5/223 | H01S5/022 | H01S5/22 | H01S5/30 | H01S3/18
Patent Agent林志剛
Agency-
Document Type专利
Identifierhttp://ir.opt.ac.cn/handle/181661/47974
Collection半导体激光器专利数据库
Affiliation東芝股份有限公司
Recommended Citation
GB/T 7714
鹽澤秀夫,山本善生,野野村敏幸,等. 半導體雷射,半導體雷射之製造方法及半導體雷射之安裝方法. TW507407B[P]. 2002-10-21.
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