埋め込み構造半導体レーザ

OPT OpenIR > 半导体激光器专利数据库

	埋め込み構造半導体レーザ
其他题名	埋め込み構造半導体レーザ
	小林健一
	1994-10-12
专利权人	NIPPON DENKI KK
公开日期	1994-10-12
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To produce the titled laser with high reliability and excellent yield oscillating at low threshold value by a method wherein said laser contains a growing interface and a closing interface of carrier separated from each other. CONSTITUTION:The titled semiconductor laser is composed of a mesa 100 comprising an active layer 30 with quantum well structure made of multilayered thin film and diffused region 50 along the sides of mesa 100 on a semiconductor substrate Besides, the mesa 100 is filled with a burying layer 40 with wider forbidden band width and less refractive index than those of the active layer 30 in the diffused region 50. Through these procedures, a carrier is separated from the interface between the sides of mesa 100 and the burying layer 40 liable to be a non-light emitting recoupling center to be closed since the carrier is closed in the multilayer structured part at the center of mesa 100. Resultantly the semiconductor laser may be provided with highly reliable buried structure at low threshold value since the burying layer 40 is built-in structured supplying the active region 30 with effective current.
其他摘要	目的：通过一种方法生产具有高可靠性和高振荡率的低标准激光的标题激光器，其中所述激光器包含生长界面和彼此分离的载体闭合界面。组成：标题半导体激光器由台面100组成，台面100包括具有量子阱结构的有源层30，该有源层30由多层薄膜和沿半导体衬底1上的台面100的侧面的扩散区域50制成。此外，台面100填充有掩埋层40具有比扩散区50中的有源层30更宽的禁带宽度和更低的折射率。通过这些步骤，载体与台面100的侧面和掩埋层40之间的界面分离。因为载体在台面100的中心处的多层结构部分中是封闭的，所以要封闭的非发光再耦合中心。由于掩埋层40是，因此半导体激光器可以在低阈值下提供高度可靠的掩埋结构。内置结构化为有源区30提供有效电流。
申请日期	1984-04-19
专利号	JP1994080855B2
专利状态	失效
申请号	JP1984078950
公开（公告）号	JP1994080855B2
IPC 分类号	H01S \| H01S5/20 \| H01S5/227 \| H01S5/00 \| H01S3/18
专利代理人	京本直樹 (外2名)
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47705
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	小林健一. 埋め込み構造半導体レーザ. JP1994080855B2[P]. 1994-10-12.