Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device
其他题名	Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device
	COFFA, SALVATORE; LIBERTINO, SEBANIA; SAGGIO, MARIO; FRISINA, FERRUCCIO
	2004-12-07
专利权人	STMICROELECTRONICS S.R.L.
公开日期	2004-12-07
授权国家	美国
专利类型	授权发明
摘要	A semiconductor device for electro-optic applications includes a rare-earth ions doped P/N junction integrated on a semiconductor substrate. The semiconductor device may be used to obtain laser action in silicon. The rare-earth ions are in a depletion layer of the doped P/N junction, and are for providing a coherent light source cooperating with a waveguide defined by the doped P/N junction. The doped P/N junction may be the base-collector region of a bipolar transistor, and is reverse biased so that the rare-earth ions provide the coherent light.
其他摘要	用于电光应用的半导体器件包括集成在半导体衬底上的掺杂稀土离子的P / N结。半导体器件可用于获得硅中的激光作用。稀土离子位于掺杂的P / N结的耗尽层中，并用于提供与由掺杂的P / N结限定的波导配合的相干光源。掺杂的P / N结可以是双极晶体管的基极 - 集电极区，并且被反向偏置，使得稀土离子提供相干光。
申请日期	2000-09-01
专利号	US6828598
专利状态	授权
申请号	US09/653390
公开（公告）号	US6828598
IPC 分类号	H01S5/30 \| H01S5/00 \| H01S3/16 \| H01S5/32 \| H01L33/00
专利代理人	-
代理机构	JORGENSON, LISA K. ALLEN,DYER,DOPPELT,MILBRATH & GILCHRIST,P.A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47653
专题	半导体激光器专利数据库
作者单位	STMICROELECTRONICS S.R.L.
推荐引用方式 GB/T 7714	COFFA, SALVATORE,LIBERTINO, SEBANIA,SAGGIO, MARIO,et al. Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device. US6828598[P]. 2004-12-07.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US6828598.PDF（507KB）	专利		开放获取	CC BY-NC-SA	请求全文