Wavelength-tunable distributed Bragg reflector semiconductor laser

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	Wavelength-tunable distributed Bragg reflector semiconductor laser
其他题名	Wavelength-tunable distributed Bragg reflector semiconductor laser
	AOYAGI, TOSHITAKA; ARIMOTO, SATOSHI
	1992-10-20
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1992-10-20
授权国家	美国
专利类型	授权发明
摘要	A wavelength-tunable distributed Bragg reflector semiconductor laser including serially disposed active, phase control, and wavelength tuning sections includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor light guide layer disposed on said substrate at least in the phase control and wavelength tuning sections of the laser including at least one quantum well layer sandwiched between quantum barrier layers; a first conductivity type semiconductor barrier layer and a semiconductor active layer serially disposed on the light guide layer in the active section of the laser; a second conductivity type semiconductor cladding layer disposed on the light guide layer at least in the phase control and wavelength tuning sections of the laser, the light guide layer including a Bragg reflector in the wavelength tuning section of the laser; a first electrode disposed on the substrate; and second, third, and fourth electrodes disposed on the cladding layer in the active, phase control, and wavelength tuning sections of the laser, respectively.
其他摘要	一种波长可调的分布式布拉格反射器半导体激光器，包括串联设置的有源，相位控制和波长调谐部分，包括第一导电型半导体衬底;第一导电型半导体光导层，至少在激光器的相位控制和波长调谐部分中设置在所述基板上，所述激光器包括夹在量子势垒层之间的至少一个量子阱层;第一导电型半导体阻挡层和串联设置在激光器有源部分中的导光层上的半导体有源层;第二导电型半导体包层，至少在激光器的相位控制和波长调谐部分中设置在光导层上，该光导层包括在激光器的波长调谐部分中的布拉格反射器;第一电极设置在基板上;第二，第三和第四电极分别设置在激光器的有源，相位控制和波长调谐部分的包层上。
申请日期	1991-06-26
专利号	US5157681
专利状态	失效
申请号	US07/721714
公开（公告）号	US5157681
IPC 分类号	H01S3/1055 \| H01S5/0625 \| H01S3/105 \| H01S5/00 \| H01S5/12 \| H01S3/10 \| H01S5/042 \| H01S3/19
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47548
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,ARIMOTO, SATOSHI. Wavelength-tunable distributed Bragg reflector semiconductor laser. US5157681[P]. 1992-10-20.