Heterostructure junction lasers

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	Heterostructure junction lasers
其他题名	Heterostructure junction lasers
	-
	1977-09-01
专利权人	WESTERN ELECTRIC CO INC
公开日期	1977-09-01
授权国家	英国
专利类型	授权发明
摘要	1484594 Lasers; semi-conductor junction devices WESTERN ELECTRIC CO Inc 22 Nov 1974 [23 Nov 1973] 50700/74 Headings H1C and H1K [Also in Division C4] A semi-conductor junction laser comprises a semi-conductor body including first and second heterojunctions 15, 19 defining an optical waveguide, and a third heterojunction 17 dividing the waveguide portion into two contiguous regions one of which-16-exhibits loss and the other-18-exhibits gain under lasing conditions, at least one of the heterojunctions being a P-N junction. Under lasing conditions the majority carrier concentration in the lossy region 16 is equal to or greater than the electron concentration in the gain region 18. The gain region is thicker than the lossy region and its thickness dg satisfies the inequality: where #n is the refractive index discontinuity at the third heterojunction, # is the full space wavelength of the laser radiation and ng is the refractive index of the gain region. In the example of Fig. 1 the various regions have the composition shown. Layer 22 may be dispensed with, depending on the difficulty of forming an electrical contact directly on layer 20. The structure is cleaved or polished optically flat along parallel surfaces 28, 30 to provide a resonator. An antireflection coating may be formed on surface 28 in order to produce an output beam through that surface. A stripe contact arrangement 40, formed, e.g. by proton bombardment, may be utilized to restrict the laser beam to a central zone 38 of the region 18. AlGaAs may be replaced by other Group III(a) and/or Group V(a) elements to form mixed crystals, e.g. AlGaAsP. To change the relative locations of the three heterojunctions and the relative locations within the three of the gain and loss regions the relative concentrations of the Ga, Al and As components within GaAlAs are altered, Figs. 2-4 (not shown).
其他摘要	1484594激光;半导体结器件WESTERN ELECTRIC CO Inc 1974年11月22日[1973年11月23日] 50700/74标题H1C和H1K [同样在C4部分]半导体结激光器包括一个半导体体，包括第一和第二异质结15,19限定光波导，以及将波导部分分成两个连续区域的第三异质结17，其中一个区域显示出损耗而另一个区域在激光条件下显示增益，至少一个异质结是PN结。在激光条件下，有损区域16中的多数载流子浓度等于或大于增益区域18中的电子浓度。增益区域比有损区域厚，并且其厚度dg满足不等式：其中#n是折射率在第三异质结处的折射率不连续，＃是激光辐射的全空间波长，ng是增益区域的折射率。在图1的示例中，各个区域具有所示的组成。取决于直接在层20上形成电接触的难度，可以省去层22.该结构沿平行表面28,30光学平坦地切割或抛光，以提供谐振器。可以在表面28上形成抗反射涂层，以便产生穿过该表面的输出光束。条形接触装置40，例如形成。通过质子轰击，可以利用激光束将激光束限制在区域18的中心区域38.AlGaAs可以被其它III族（a）和/或V族（a）元素取代，形成混合晶体，例如， AlGaAsP。为了改变三个异质结的相对位置和三个增益和损耗区域内的相对位置，改变GaAlAs中Ga，Al和As组分的相对浓度。 2-4（未示出）。
申请日期	1974-11-22
专利号	GB1484594A
专利状态	失效
申请号	GB1974050700
公开（公告）号	GB1484594A
IPC 分类号	H01S \| H01S5/32 \| H01S5/00 \| H01S5/20 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47536
专题	半导体激光器专利数据库
作者单位	WESTERN ELECTRIC CO INC
推荐引用方式 GB/T 7714	-. Heterostructure junction lasers. GB1484594A[P]. 1977-09-01.

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