Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same

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	Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same
其他题名	Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same
	FORRAI, DAVID; ENDRES, DARREL; JONES, ROBERT; GARTER, MICHAEL JAMES
	2012-12-25
专利权人	L3 CINCINNATI ELECTRONICS CORPORATION
公开日期	2012-12-25
授权国家	美国
专利类型	授权发明
摘要	A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
其他摘要	制造前侧照射的反量子阱红外光电探测器的方法可以包括提供具有体衬底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替的量子阱层和外延生长在其上的阻挡层体衬底层。该方法还包括将至少一个前侧共同电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，减薄量子阱晶片的体衬底层，以及蚀刻量子物质以形成限定至少一个锥体量子阱堆叠的量子阱小面。背侧电接触可以应用于金字塔形量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。
申请日期	2011-02-02
专利号	US8338200
专利状态	授权
申请号	US13/019658
公开（公告）号	US8338200
IPC 分类号	H01L21/00 \| H01L31/0232 \| H01S5/00
专利代理人	-
代理机构	DINSMORE & SHOHL LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47516
专题	半导体激光器专利数据库
作者单位	L3 CINCINNATI ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	FORRAI, DAVID,ENDRES, DARREL,JONES, ROBERT,et al. Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same. US8338200[P]. 2012-12-25.

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