Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)

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	Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
其他题名	Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
	KISH, JR., FRED A.; HURTT, SHEILA; JOYNER, CHARLES H.; SCHNEIDER, RICHARD P.
	2007-04-24
专利权人	INFINERA CORPORATION
公开日期	2007-04-24
授权国家	美国
专利类型	授权发明
摘要	In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
其他摘要	在具有至少一个有源半导体器件的光子集成电路（PIC）中，例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其他有源器件，在其上形成多个半导体层。衬底，其中一个层是有源区。通过由在指定的有源区沟道的相邻侧上形成的电流阻挡层限定的该有源区形成电流沟道，其中阻挡层基本上限制通过沟道的电流。阻挡层的特征在于是含铝的III-V族化合物，即Al-III-V层，故意用氧化物源氧掺杂。而且，湿氧化工艺或沉积的氧化物源可用于横向形成Al-III-V层的原生氧化物。可用于光通信波长的本发明材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其他材料可以是InAlGaAs或交替层或AlAs / InAs的交替单层。因此，O掺杂的阻挡层可以是未掺杂的，掺杂杂质的或与Fe共掺杂的。
申请日期	2005-02-16
专利号	US7208770
专利状态	授权
申请号	US11/059207
公开（公告）号	US7208770
IPC 分类号	H01L33/00 \| H01L29/22 \| H01L29/165 \| H01L29/40 \| H01L31/0304 \| H01L31/109 \| H01L31/153 \| H01L33/14 \| H01S5/00 \| H01S5/026 \| H01S5/20 \| H01S5/22 \| H01S5/223 \| H01S5/227 \| H01S5/343
专利代理人	-
代理机构	CAROTHERS,JR., W. DOUGLAS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47487
专题	半导体激光器专利数据库
作者单位	INFINERA CORPORATION
推荐引用方式 GB/T 7714	KISH, JR., FRED A.,HURTT, SHEILA,JOYNER, CHARLES H.,et al. Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs). US7208770[P]. 2007-04-24.

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