Semiconductor laser diode and the manufacturing method thereof

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	Semiconductor laser diode and the manufacturing method thereof
其他题名	Semiconductor laser diode and the manufacturing method thereof
	INOUE, YUTAKA; SEMBA, YASUHISA; SORIMACHI, SUSUMU; KOUZU, KOUICHI
	2010-01-26
专利权人	USHIO OPTO SEMICONDUCTORS, INC.
公开日期	2010-01-26
授权国家	美国
专利类型	授权发明
摘要	A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer.
其他摘要	一种多束半导体激光二极管，具有：n型半导体衬底; n型覆层，有源层，p型覆层和接触层;多个分隔槽，从基板的一端延伸到另一端，并由接触层形成到p型覆层的预定深度;条形脊，夹在两个分离槽之间;绝缘层，覆盖从每个脊的接触层的每个侧壁经由分离槽到分隔区域的端部的区域;第一电极形成在基板的第二平面上;形成在每个分隔区域中的第二电极，覆盖脊上方的区域，分离槽和分离槽外的多层半导体层，第二电极由下部第二电极层和上部第二镀层构成。
申请日期	2008-05-22
专利号	US7653114
专利状态	授权
申请号	US12/153681
公开（公告）号	US7653114
IPC 分类号	H01S5/00 \| H01L21/00 \| H01S3/097 \| B82Y20/00 \| H01S5/022 \| H01S5/042 \| H01S5/22
专利代理人	-
代理机构	STITES & HARBISON PLLC MARQUEZ, ESQ., JUAN CARLOS A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47420
专题	半导体激光器专利数据库
作者单位	USHIO OPTO SEMICONDUCTORS, INC.
推荐引用方式 GB/T 7714	INOUE, YUTAKA,SEMBA, YASUHISA,SORIMACHI, SUSUMU,et al. Semiconductor laser diode and the manufacturing method thereof. US7653114[P]. 2010-01-26.

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