Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device

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	Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device
其他题名	Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device
	KOUI, TOMOAKI
	2001-10-09
专利权人	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
公开日期	2001-10-09
授权国家	美国
专利类型	授权发明
摘要	First, a waveguide which lases in accordance with a predetermined voltage applied thereto is formed on a predetermined region on a substrate. An SiO2 mask is formed on a top of the waveguide. Then, a current-blocking layer of group III material and group V material for blocking a current is formed on the substrate and the waveguide except a top of the waveguide on which the SiO2 mask is formed. In this step, the group III material including group III elements and the group V material including group V elements in the current-blocking layer are supplied to the surface of the substrate. A migration length of the group III material on the surface is controlled by controlling at least one of the growth temperature of the current-blocking layer and the pressure of the supplied group V material. And a cladding layer is formed after the SiO2 mask is removed, on the waveguide and the current-blocking layer and a contact layer is formed on the cladding layer. And then, an electrode is formed on the contact layer and another electrode is formed on a surface of the substrate which is opposite to the surface on which the waveguide is formed, thus a semiconductor laser device is completed.
其他摘要	首先，在基板上的预定区域上形成根据施加到其上的预定电压激光的波导。在波导的顶部形成SiO2掩模。然后，在基板和波导上形成用于阻挡电流的III族材料和V族材料的电流阻挡层，除了形成有SiO2掩模的波导的顶部之外。在该步骤中，将包括III族元素的III族材料和包括电流阻挡层中的V族元素的V族材料供应到基板的表面。通过控制电流阻挡层的生长温度和供应的V族材料的压力中的至少一个来控制表面上III族材料的迁移长度。然后，在去除SiO2掩模之后，在波导和电流阻挡层上形成包层，并在包层上形成接触层。然后，在接触层上形成电极，在基板的与形成波导的表面相对的表面上形成另一电极，从而完成半导体激光器件。
申请日期	1999-09-15
专利号	US6300153
专利状态	失效
申请号	US09/396857
公开（公告）号	US6300153
IPC 分类号	C30B25/02 \| H01L21/02 \| H01L21/205 \| H01L21/20 \| H01S5/227 \| H01S5/00 \| H01S5/22 \| H01L21/00
专利代理人	-
代理机构	HUTCHINS,WHEELER & DITTMAR
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47361
专题	半导体激光器专利数据库
作者单位	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
推荐引用方式 GB/T 7714	KOUI, TOMOAKI. Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device. US6300153[P]. 2001-10-09.

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