MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS

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	MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS
其他题名	MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS
	LOGAN, RALPH ANDRE; MILLER, BARRY IRWIN
	1975-01-07
专利权人	BELL TELEPHONE LABORATORIES, INCORPORATED
公开日期	1975-01-07
授权国家	美国
专利类型	授权发明
摘要	A multiple anodization technique is described for producing GaAs layers of nonuniform thickness; that is, GaAs layers having substantially rectangular steps or grooves of the type capable of guiding light. The technique includes the following steps: (1) growing a native oxide layer on a major surface of the GaAs layer by submersing the GaAs layer in an anodization bath of concentrated H.sub.2 O.sub.2 having a pH less than 6; (2) removing selected portions of the oxide layer so as to expose the GaAs layer adjacent to the desired step region; and (3) immersing the surface again in an anodization bath of concentrated H.sub.2 O.sub.2 having a pH less than 6. Also described are techniques for growing by liquid phase epitaxy an AlGaAs layer over the resultant GaAs step structure in a manner which alleviates two problems: the formation of deleterious oxides on the GaAs layer and the dissolving of the step configuration while in contact with the AlGaAs growth solution.
其他摘要	描述了一种多阳极氧化技术，用于制造厚度不均匀的GaAs层;也就是说，GaAs层具有能够引导光的类型的基本上矩形的台阶或凹槽。该技术包括以下步骤：（1）通过将GaAs层浸没在pH小于6的浓H2O2的阳极氧化浴中，在GaAs层的主表面上生长自然氧化层。 ; （2）去除氧化物层的选定部分，以暴露与所需台阶区相邻的GaAs层; （3）将表面再次浸入pH小于6的浓度H2O2的阳极氧化浴中。还描述了通过液相外延生长AlAsAs层而得到的GaAs步骤结构的技术以减轻两个问题的方式：在GaAs层上形成有害氧化物和在与AlGaAs生长溶液接触时溶解阶梯构型。
申请日期	1974-01-17
专利号	US3859178
专利状态	失效
申请号	US05/434286
公开（公告）号	US3859178
IPC 分类号	C25D11/02 \| C25D11/32 \| H01S5/00 \| H01S5/227 \| C23B5/48 \| C23B5/46 \| C23B9/00
专利代理人	-
代理机构	URBANO, M. J.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47320
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORIES, INCORPORATED
推荐引用方式 GB/T 7714	LOGAN, RALPH ANDRE,MILLER, BARRY IRWIN. MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS. US3859178[P]. 1975-01-07.

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