Semiconductor metal contacting structure and a light emitting device

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	Semiconductor metal contacting structure and a light emitting device
其他题名	Semiconductor metal contacting structure and a light emitting device
	IKEDA, MASAO; ITO, SATOSHI; IOCHI, YOSHINO; MIYAJIMA, TAKAO; OZAWA, MASAFUMI; AKIMOTO, KATSUHIRO; ISHIBASH, AKIRA; HIEI, FUTOSHI
	1995-11-28
专利权人	SONY CORPORATION
公开日期	1995-11-28
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.
其他摘要	公开了一种能够发射蓝光或绿光的半导体激光器。半导体激光器包括n型ZnMgSSe包层，有源层，p型ZnMgSSe包层，p型ZnSe接触层和p型ZnTe接触层，它们按此顺序堆叠在n型上GaAs衬底。 p侧电极设置在p型ZnTe接触层上。 n侧电极设置在n型GaAs衬底的背表面上。包括由p型ZnTe制成的量子阱和由p型ZnSe制成的势垒的多量子阱层设置在p型ZnSe接触层中沿着p型ZnSe接触层和p型ZnSe接触层之间的结界面产生的耗尽层中。 p型ZnTe接触层。从p侧电极注入的空穴通过共振隧穿效应穿过结，通过在多量子阱层的量子阱中形成的量子能级。
申请日期	1993-06-18
专利号	US5471067
专利状态	失效
申请号	US08/078037
公开（公告）号	US5471067
IPC 分类号	H01S5/042 \| H01L33/00 \| H01S5/00 \| H01S5/327 \| H01S5/347 \| H01S5/30 \| H01L29/15 \| H01L21/44 \| H01L33/06 \| H01L33/28 \| H01L33/40 \| H01L27/14 \| H01L31/00
专利代理人	-
代理机构	HILL,STEADMAN & SIMPSON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/47262
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	IKEDA, MASAO,ITO, SATOSHI,IOCHI, YOSHINO,et al. Semiconductor metal contacting structure and a light emitting device. US5471067[P]. 1995-11-28.

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