Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor metal contacting structure and a light emitting device | |
其他题名 | Semiconductor metal contacting structure and a light emitting device |
IKEDA, MASAO; ITO, SATOSHI; IOCHI, YOSHINO; MIYAJIMA, TAKAO; OZAWA, MASAFUMI; AKIMOTO, KATSUHIRO; ISHIBASH, AKIRA; HIEI, FUTOSHI | |
1995-11-28 | |
专利权人 | SONY CORPORATION |
公开日期 | 1995-11-28 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer. |
其他摘要 | 公开了一种能够发射蓝光或绿光的半导体激光器。半导体激光器包括n型ZnMgSSe包层,有源层,p型ZnMgSSe包层,p型ZnSe接触层和p型ZnTe接触层,它们按此顺序堆叠在n型上GaAs衬底。 p侧电极设置在p型ZnTe接触层上。 n侧电极设置在n型GaAs衬底的背表面上。包括由p型ZnTe制成的量子阱和由p型ZnSe制成的势垒的多量子阱层设置在p型ZnSe接触层中沿着p型ZnSe接触层和p型ZnSe接触层之间的结界面产生的耗尽层中。 p型ZnTe接触层。从p侧电极注入的空穴通过共振隧穿效应穿过结,通过在多量子阱层的量子阱中形成的量子能级。 |
申请日期 | 1993-06-18 |
专利号 | US5471067 |
专利状态 | 失效 |
申请号 | US08/078037 |
公开(公告)号 | US5471067 |
IPC 分类号 | H01S5/042 | H01L33/00 | H01S5/00 | H01S5/327 | H01S5/347 | H01S5/30 | H01L29/15 | H01L21/44 | H01L33/06 | H01L33/28 | H01L33/40 | H01L27/14 | H01L31/00 |
专利代理人 | - |
代理机构 | HILL,STEADMAN & SIMPSON |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/47262 |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORPORATION |
推荐引用方式 GB/T 7714 | IKEDA, MASAO,ITO, SATOSHI,IOCHI, YOSHINO,et al. Semiconductor metal contacting structure and a light emitting device. US5471067[P]. 1995-11-28. |
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US5471067.PDF(826KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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