VCSEL and manufacturing method of the same

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	VCSEL and manufacturing method of the same
其他题名	VCSEL and manufacturing method of the same
	PARK, HYUNDAI; KIM, GYUNGOCK
	2015-08-25
专利权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期	2015-08-25
授权国家	美国
专利类型	授权发明
摘要	Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.
其他摘要	提供一种垂直腔面发射激光器（VCSEL）。VCSEL包括硅衬底，设置在硅衬底上的下反射层，设置在下反射层上的光产生激光器，以及设置在光产生层上的上反射层。下反射层，光产生层和上反射层可以包括通过晶片键合单片集成在第一杂质层上的III-V半导体光源 - 有源层。
主权项	A vertical-cavity surface-emitting laser (VCSEL) comprising: a silicon substrate comprising a bulk silicon layer and a first impurity layer disposed in the bulk silicon layer; a semiconductor light source-active layer comprising a lower reflective layer disposed on the silicon substrate, a light generation layer disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer; and a lower current aperture disposed within the first impurity layer and disposed under a bottom surface of the lower reflective layer disposed on the first impurity layer, wherein the first impurity layer and the lower reflective layer directly contact each other, wherein the first impurity layer comprises first conductive type impurities doped in the silicon substrate, and wherein the lower reflective layer has the same conductive type as that of the first impurity layer.
申请日期	2014-03-03
专利号	US9118160
专利状态	授权
申请号	US14/195778
公开（公告）号	US9118160
IPC 分类号	H01S5/02 \| H01S5/042 \| H01S5/183
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46897
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	PARK, HYUNDAI,KIM, GYUNGOCK. VCSEL and manufacturing method of the same. US9118160[P]. 2015-08-25.

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