GaN laser with refractory metal ELOG masks for intracavity contact

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	GaN laser with refractory metal ELOG masks for intracavity contact
其他题名	GaN laser with refractory metal ELOG masks for intracavity contact
	BOUR, DAVID P.; CORZINE, SCOTT W
	2009-12-29
专利权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
公开日期	2009-12-29
授权国家	美国
专利类型	授权发明
摘要	Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.
其他摘要	难熔金属ELOG掩模用于基于GaN的VCSEL和边缘发射极结构，以用作腔内接触。在这些结构中，难熔金属ELOG掩模既用作欧姆接触金属，也用作ELOG的掩模。
主权项	A nitride semiconductor laser structure comprising: a plurality of semiconductor layers; an active region surrounded by said plurality of semiconductor layers; an upper and lower reflector located on opposite sides of said active region; a first refractory metal layer disposed parallel to and penetrating into at least one of said plurality of semiconductor layers such that said first refractory metal layer is disposed on a first side of said active region; and a first metal contact electrically coupled to said first refractory metal layer; wherein said first refractory metal layer is positioned at a null of a standing wave capable of being generated between said upper and said lower reflector.
申请日期	2005-09-09
专利号	US7638810
专利状态	失效
申请号	US11/223622
公开（公告）号	US7638810
IPC 分类号	H01L29/207
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46438
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	BOUR, DAVID P.,CORZINE, SCOTT W. GaN laser with refractory metal ELOG masks for intracavity contact. US7638810[P]. 2009-12-29.

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