Semiconductor laser having co-doped distributed bragg reflectors

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	Semiconductor laser having co-doped distributed bragg reflectors
其他题名	Semiconductor laser having co-doped distributed bragg reflectors
	DENG, HONGYU; WANG, XIAOZHONG; LEI, CHUN
	2001-10-09
专利权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
公开日期	2001-10-09
授权国家	美国
专利类型	授权发明
摘要	This invention provides a semiconductor laser device, such as a Vertical Cavity Surface-Emitting Laser (VCSEL) device which includes a Distributed Bragg Reflector (DBR) made up of layers which are co-doped with different dopants. For instance, a p-type DBR produced by organometallic vapor-phase epitaxy (OMPVE) includes layers having, respectively, a low refractive index and a high refractive index, the layers being made, respectively, of high-Al AlGaAs and low-Al AlGaAs. According to the invention, C, by itself or in addition to Mg, is used as the dopant in the high-Al AlGaAs layers, and Mg is used in the low-Al AlGaAs layers. Because of this co-doping, the semiconductor laser device achieves low series resistance and operating voltage, with good manufacturability.
其他摘要	本发明提供一种半导体激光器件，例如垂直腔面发射激光器（VCSEL）器件，其包括由共掺杂有不同掺杂剂的层构成的分布式布拉格反射器（DBR）。例如，由有机金属气相外延（OMPVE）产生的p型DBR包括分别具有低折射率和高折射率的层，这些层分别由高Al AlGaAs和低Al制成。的AlGaAs。根据本发明，C本身或除Mg之外用作高Al AlGaAs层中的掺杂剂，Mg用于低Al AlGaAs层。由于这种共掺杂，半导体激光器件实现了低串联电阻和工作电压，并具有良好的可制造性。
主权项	A semiconductor laser device comprising: an active layer having opposing sides; a first reflective structure disposed on one side of the active layer, the first reflective structure including, a first layer, having a first index of refraction, being made of a first semiconductor compound including a first dopant, and a second layer, having a second index of refraction, being made of a second semiconductor compound including a second dopant, the second dopant being different from the first dopant; and a second reflective structure disposed on the side of the active layer opposite to one side, the second reflective structure including, a first layer, having a first index of refraction and being made of a first semiconductor compound including a first dopant, and a second layer, having a second index of refraction and being made of a second semiconductor compound including a second dopant, the second dopant being different from the first dopant.
申请日期	1998-08-31
专利号	US6301281
专利状态	失效
申请号	US09/144355
公开（公告）号	US6301281
IPC 分类号	H01S5/30 \| H01S5/183 \| H01S5/00 \| H01S3/08
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46362
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	DENG, HONGYU,WANG, XIAOZHONG,LEI, CHUN. Semiconductor laser having co-doped distributed bragg reflectors. US6301281[P]. 2001-10-09.