Optoelectronic integrated device

OPT OpenIR > 半导体激光器专利数据库

	Optoelectronic integrated device
其他题名	Optoelectronic integrated device
	KOBAYASHI, YASUHIRO; MATSUDA, KENICHI
	1997-10-21
专利权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开日期	1997-10-21
授权国家	美国
专利类型	授权发明
摘要	The optoelectronic integrated device includes a semiconductor substrate, a vertical-cavity surface-emitting semiconductor laser formed on the semiconductor substrate, a phototransistor stacked over the vertical-cavity surface emitting semiconductor laser, for driving the vertical-cavity surface-emitting semiconductor laser, and a semiconductor buffer structure interposed between the vertical-cavity surface-emitting semiconductor laser and the phototransistor. The vertical-cavity surface-emitting semiconductor laser includes: a bottom semiconductor mirror; a top semiconductor mirror; and an active region interposed between the bottom semiconductor mirror and the top semiconductor mirror and having a strained quantum well structure for emitting light having a wavelength of lambda . The phototransistor includes: a collector layer; an emitter layer; and a base layer interposed between the collector layer and the emitter layer and absorbing light having a wavelength of lambda . The semiconductor buffer structure includes: a first surface facing the phototransistor and having a lattice constant substantially lattice-matching with the base layer, and a second surface facing the vertical-cavity surface-emitting semiconductor laser.
其他摘要	该光电集成器件包括半导体衬底，形成在半导体衬底上的垂直腔表面发射半导体激光器，堆叠在垂直腔表面发射半导体激光器上的光电晶体管，用于驱动垂直腔表面发射半导体激光器，和半导体缓冲结构介于垂直腔面发射半导体激光器和光电晶体管之间。垂直腔面发射半导体激光器包括：底部半导体反射镜;顶部半导体镜;插入在底部半导体镜和顶部半导体镜之间并具有应变量子阱结构的有源区用于发射具有λ波长的光。光电晶体管包括：集电极层;发射层;基板层介于集电极层和发射极层之间，吸收波长λ的光。半导体缓冲结构包括：第一表面，其面对光电晶体管并且具有与基层基本上晶格匹配的晶格常数，以及面对垂直腔表面发射半导体激光器的第二表面。
主权项	An optoelectronic integrated device comprising: a semiconductor substrate; a vertical-cavity surface-emitting semiconductor laser formed on the semiconductor substrate, the vertical-cavity surface-emitting semiconductor laser including: a bottom semiconductor mirror; a top semiconductor mirror; and an active region interposed between the bottom semiconductor mirror and the top semiconductor mirror, the active region having a strained quantum well structure for emitting light having a wavelength of .lambda.; a phototransistor stacked over the vertical-cavity surface-emitting semiconductor laser, for driving the vertical-cavity surface-emitting semiconductor laser, the phototransistor including: a collector layer; an emitter layer; and a base layer interposed between the collector layer and the emitter layer, the base layer absorbing the light having the wavelength of .lambda.; and a semiconductor buffer structure interposed between the vertical-cavity surface-emitting semiconductor laser and the phototransistor, the semiconductor buffer structure including: a first surface facing the phototransistor and having a lattice constant substantially lattice-matching with the base layer; and a second surface facing the vertical-cavity surface-emitting semiconductor laser.
申请日期	1995-07-05
专利号	US5679964
专利状态	失效
申请号	US08/498096
公开（公告）号	US5679964
IPC 分类号	H01L31/14 \| H01L31/153 \| H01S5/00 \| H01S5/183 \| H01S5/026 \| H01L27/15
专利代理人	-
代理机构	RENNER,OTTO,BOISSELLE,SKLAR
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46309
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	KOBAYASHI, YASUHIRO,MATSUDA, KENICHI. Optoelectronic integrated device. US5679964[P]. 1997-10-21.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US5679964.PDF（1173KB）	专利		开放获取	CC BY-NC-SA	请求全文