Laser devices including separate confinement heterostructure

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	Laser devices including separate confinement heterostructure
其他题名	Laser devices including separate confinement heterostructure
	HEFFERNAN, JONATHAN; DUGGAN, GEOFFREY
	2000-07-04
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2000-07-04
授权国家	美国
专利类型	授权发明
摘要	A separate confinement heterostructure (SCH) laser device (LD) has: a quantum well active region within an optical guiding region; and, n-type and p-type cladding regions provided on opposite sides of the optical guiding region. An electron-capture layer is provided in the n-side portion of the optical guiding region. The composition of the electron-capture layer is set in such a manner that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region and/or the n-side portion of the optical guiding region. The electron-capture layer is thick enough to bind X-electrons so that, in use, the electron-capture layer promotes the capture of the X-electrons. The electron-capture layer is disposed sufficiently close to the active region to permit transfer ot the captured X-electrons to at least one GAMMA -confined level in the active region.
其他摘要	单独的限制异质结构（SCH）激光器件（LD）具有：光学引导区域内的量子阱有源区域;并且，n型和p型包层区域设置在光学引导区域的相对侧上。电子捕获层设置在光导区域的n侧部分中。电子捕获层的组成以这样的方式设定，使得导带中的X电子的最小能量低于有源区域的周围部分和/或光导的n侧部分的最小能量。地区。电子捕获层足够厚以结合X电子，使得在使用中，电子捕获层促进X电子的捕获。电子捕获层设置得足够靠近有源区，以允许捕获的X电子转移到有源区中的至少一个GAMMA限制的电平。
主权项	A separate confinement heterostructure (SCH) laser device (LD), comprising a heterostructure which includes: an optical guiding region; an active region having at least one energy well, the active region being provided in the optical guiding region; and n-type and p-type cladding regions provided on opposite sides of the optical guiding region, wherein a first electron-capture layer is provided in the active region or in a predetermined portion of the optical guiding region which is disposed between the active region and the n-type cladding region, a composition of the first electron-capture layer is set in such a manner that the electron-capture layer has an X-minimum which is lower than that in adjacent parts of the heterostructure, the first electron-capture layer is thick enough to bind X-electrons so that, in use, the first electron-capture layer promotes capture of the X-electrons, and the first electron-capture layer is disposed sufficiently close to the active region to permit transfer of the captured X-electrons to at least one .GAMMA.-confined level in the active region.
申请日期	1997-12-16
专利号	US6084898
专利状态	失效
申请号	US08/991237
公开（公告）号	US6084898
IPC 分类号	H01S5/34 \| H01S5/20 \| H01S5/00 \| H01S5/343 \| H01S5/32 \| H01S5/183 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46296
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	HEFFERNAN, JONATHAN,DUGGAN, GEOFFREY. Laser devices including separate confinement heterostructure. US6084898[P]. 2000-07-04.

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