Semiconductor laser device including transparent electrode

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	Semiconductor laser device including transparent electrode
其他题名	Semiconductor laser device including transparent electrode
	UEDA, TETSUZO; YURI, MASAAKI
	2010-11-02
专利权人	PANASONIC CORPORATION
公开日期	2010-11-02
授权国家	美国
专利类型	授权发明
摘要	It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
其他摘要	本发明的一个目的是提供一种具有高产率的半导体激光器件，其中外延生长层中产生的噼啪声受到限制，并且其制造方法中，半导体激光器件包括GaN衬底1，n- GaN型层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 ，p型GaN引导层8，SiO2阻挡层9，作为透明电极的Ni / ITO包覆层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。在InGaN多量子阱有源层5上方形成SiO2阻挡层9，以具有开口。 Ni / ITO包覆层电极10形成在开口内部，并且对于来自InGaN多量子阱有源层的光是透明的，并且用作包覆层。
主权项	A semiconductor laser device comprising: a light-emitting layer which is made of a semiconductor; a current-blocking layer which is formed above said light-emitting layer so as to have an opening, and which is composed of a first dielectric, the current-blocking layer including a lower surface and an upper surface, the lower surface being closer to the light-emitting layer than the upper surface; and a transparent electrode which is formed inside the opening, and which is transparent for light emitted from said light-emitting layer, and covers the upper surface of said current-blocking layer; anda dielectric layer which is formed inside the opening, and which is made of a second dielectric, wherein said dielectric layer is formed above said light-emitting layer so as to have said transparent electrode in between, and which has a refractive index that is higher than a refractive index of said current-blocking layer and smaller than a refractive index of said light-emitting layer.
申请日期	2007-09-05
专利号	US7826512
专利状态	授权
申请号	US11/850603
公开（公告）号	US7826512
IPC 分类号	H01S5/00 \| H01S3/097 \| H01L29/06 \| H01S5/042 \| H01S5/20 \| H01S5/223 \| H01S5/343
专利代理人	-
代理机构	GREENBLUM & BERNSTEIN,P.L.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46284
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	UEDA, TETSUZO,YURI, MASAAKI. Semiconductor laser device including transparent electrode. US7826512[P]. 2010-11-02.

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