Semiconductor laser device including highly reflective coating film

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	Semiconductor laser device including highly reflective coating film
其他题名	Semiconductor laser device including highly reflective coating film
	NISHIGUCHI, HARUMI; MATSUOKA, HIROMASU; NAKAGAWA, YASUYUKI; KUNITSUGU, YASUHIRO
	2010-11-02
专利权人	MITSUBISHI ELECTRIC CORPORATION
公开日期	2010-11-02
授权国家	美国
专利类型	授权发明
摘要	A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.
其他摘要	一种半导体发光装置，包括产生具有振荡波长λ的光的光产生单元，在光产生单元处产生的光出射的光出射面，在光产生单元处产生的光被反射的光反射面，光反射面上的高反射膜，由至少三层的电介质多层膜构成。高反射膜包括与光反射面接触的第一层，由Al2O3构成，并且具有小于λ/ 4n的厚度，其中n是Al2O3的折射率，第二层是与Al2O3接触的第一层和第三层，第三层与第二层接触并具有与第二层的折射率不同的折射率。
主权项	A semiconductor laser device including semiconductor films on a substrate, comprising: a cavity extending in a propagation direction of a laser beam having wavelength λ; a first facet on a first end of the cavity and through which the laser beam is emitted; a second facet on a second end of the cavity and reflecting the laser beam; anda highly reflective film on said second facet and consisting of an insulating multi-layered film of at least three layers, wherein said highly reflective film comprises a first layer which is in contact with said second facet, is constituted of Al2O3, and has a thickness smaller than λ/4n wherein n is the refractive index of Al2O3, a second layer which is in contact with said first layer and is constituted of any of SiO2, MgF2, NaF, Ca2F, CeF3, LaF3, LiF, and NdF3, and a third layer which is in contact with said second layer and has a refractive index different from the refractive index of said second layer.
申请日期	2008-01-30
专利号	US7826507
专利状态	失效
申请号	US12/022194
公开（公告）号	US7826507
IPC 分类号	H01S5/00
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER,LTD.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46280
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	NISHIGUCHI, HARUMI,MATSUOKA, HIROMASU,NAKAGAWA, YASUYUKI,et al. Semiconductor laser device including highly reflective coating film. US7826507[P]. 2010-11-02.

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