Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement

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	Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
其他题名	Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
	JOHNSTON, JR., WILBUR D.; KARLICEK, JR., ROBERT F.; LONG, JUDITH A.; WILT, DANIEL P.
	1989-12-19
专利权人	AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES
公开日期	1989-12-19
授权国家	美国
专利类型	授权发明
摘要	High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
其他摘要	高电阻率In基化合物III-V族外延层用于防止大量电流流过半导体器件的区域，例如CSBH，DCPBH，EMBH或CMBH激光器，LED，光电二极管，HBT或FET。还描述了用于制造掺杂Fe的高电阻率材料的氢化物VPE工艺。 Fe由挥发性卤化Fe化合物提供，并且氢化物的热解延长受到限制，以允许将足够的掺杂剂输送到生长区域。
主权项	A semiconductor device comprising a semiconductor body, means for applying current to said body, and means for preventing substantial current flow through a region of said body, characterized in that said preventing means comprises an In-based compound Group III-V epitaxial layer included in said region and having the physical characteristics of an Fe-doped InP-based MOCVD layer.
申请日期	1988-04-20
专利号	US4888624
专利状态	失效
申请号	US07/183796
公开（公告）号	US4888624
IPC 分类号	C30B25/02 \| H01L21/02 \| H01L21/205 \| H01L33/00 \| H01S5/00 \| H01S5/24 \| H01S5/227 \| H01S5/223 \| H01L33/24 \| H01L33/30 \| H01S3/19
专利代理人	-
代理机构	KOBA, W.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46266
专题	半导体激光器专利数据库
作者单位	AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES
推荐引用方式 GB/T 7714	JOHNSTON, JR., WILBUR D.,KARLICEK, JR., ROBERT F.,LONG, JUDITH A.,et al. Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement. US4888624[P]. 1989-12-19.

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