Optoelectronic integrated circuit

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	Optoelectronic integrated circuit
其他题名	Optoelectronic integrated circuit
	ABELES, JOSEPH H.
	1991-03-26
专利权人	DAVID SARNOFF RESEARCH CENTER, INC., A CORP. OF DE
公开日期	1991-03-26
授权国家	美国
专利类型	授权发明
摘要	The present invention relates to an optoelectronic integrated circuit having a substantially planar surface and which includes at least one laser diode and at least one field effect transistor. The integrated circuit comprises a substrate of semi-insulating GaAs having on a surface thereof in succession a first clad layer, a first confinement layer, a quantum well active layer, a second confinement layer, a second clad layer and an FET active layer. The FET active layer is of a material having good field effect transistor characteristics, such as N type GaAs or N type A1GaAs over a layer of undoped GaAs. The quantum well active layer is formed of alternating layers of undoped GaAs and a material which is capable of generating light of a wavelength longer than can be absorbed by the FET active layer, such as undoped InGaAs. The laser diode includes spaced contact regions of opposite conductivity type extending through the layers to the quantum well active layer. The field effect transistor comprises a groove in the FET active layer, a gate in the groove on the FET active layer and having a Schottky barrier contact with the FET active layer, and source and drain contacts on the FET active layer at opposite sides of the groove.
其他摘要	光电集成电路技术领域本发明涉及一种光电集成电路，其具有基本平坦的表面并且包括至少一个激光二极管和至少一个场效应晶体管。该集成电路包括半绝缘GaAs衬底，该衬底在其表面上依次具有第一覆层，第一限制层，量子阱有源层，第二限制层，第二覆层和FET有源层。 FET有源层是具有良好场效应晶体管特性的材料，例如在未掺杂的GaAs层上的N型GaAs或N型AlGaAs。量子阱有源层由未掺杂的GaAs和能够产生波长比FET有源层可吸收的波长的光的材料形成，例如未掺杂的InGaAs。激光二极管包括相反导电类型的间隔开的接触区域，其延伸穿过层到量子阱有源层。场效应晶体管包括FET有源层中的沟槽，FET有源层上的沟槽中的栅极，并且具有与FET有源层的肖特基势垒接触，以及在FET有源层的相对侧上的源极和漏极接触。槽。
主权项	An optoelectronic integrated circuit comprising: a body of Group III-V semiconductor materials including a N type FET active layer along a surface thereof and a optically active layer extending across the body parallel to and spaced from the FET active layer, said optically active layer being of a semiconductor material which is capable of generating light of a wavelength longer than can be absorbed in the material of the FET active layer; a field effect transistor in said FET active layer; and a laser diode in said body including the optically active layer.
申请日期	1989-12-29
专利号	US5003359
专利状态	失效
申请号	US07/459396
公开（公告）号	US5003359
IPC 分类号	H01L27/15 \| H01L31/173 \| H01L31/16 \| H01L33/00 \| H01S5/026 \| H01S5/00 \| H01S5/187 \| H01L33/06 \| H01L31/12
专利代理人	-
代理机构	BURKE, WILLIAM J.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46264
专题	半导体激光器专利数据库
作者单位	DAVID SARNOFF RESEARCH CENTER, INC., A CORP. OF DE
推荐引用方式 GB/T 7714	ABELES, JOSEPH H.. Optoelectronic integrated circuit. US5003359[P]. 1991-03-26.

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