Stripe-geometry double heterojunction laser element

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	Stripe-geometry double heterojunction laser element
其他题名	Stripe-geometry double heterojunction laser element
	YONEZU, HIROO; UENO, MASAYASU
	1981-08-04
专利权人	NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, JAPAN
公开日期	1981-08-04
授权国家	美国
专利类型	授权发明
摘要	In a double heterojunction semiconductor laser, extremely high optical power density emission is achieved by forming a stripe-geometry exciting region in an active layer so as not to be exposed on the opposite reflective surfaces, and selecting a band gap of the stripe-geometry exciting region narrower than that of surrounding non-exciting region of the active layer. A pair of window regions formed between the respective reflective surfaces and the tip ends of the stripe-geometry exciting region are sandwiched between a pair of heterojunction interfaces and thus acting low loss optical waveguides. In addition, by providing an optical obstacle region in the vicinity of the window region, higher order modes in horizontal transverse mode oscillations are suppressed, and thereby extremely high optical power output at the fundamental mode can be obtained without causing catastrophic optical damage on the reflective surfaces.
其他摘要	在双异质结半导体激光器中，通过在有源层中形成条纹几何激发区域以便不暴露在相对的反射表面上，并选择条带几何激发的带隙，实现极高的光功率密度发射。区域比有源层周围非激发区域的区域窄。在各个反射表面和条纹几何激发区域的尖端之间形成的一对窗口区域夹在一对异质结界面之间，从而起到低损耗光学波导的作用。另外，通过在窗口区域附近设置光学障碍区域，抑制了水平横模振荡中的高阶模式，从而可以获得在基模处的极高光功率输出，而不会对反射造成灾难性的光学损坏。表面。
主权项	A semiconductor laser comprising a semiconductor crystal having a pair of principal surfaces, a first, second, third and fourth side surfaces, said first and second side surfaces being optically reflective and constituting an optical resonator, said third and fourth side surfaces respectively crossing with said first and second side surfaces and being opposing to each other, and a pair of electrodes, said semiconductor crystal including an active layer bounded by a pair of heterojunction interfaces and said first and second side surfaces, said active layer having an elongated exciting region between said first and second side surfaces in a stripe-geometry, one and the other ends of said exciting region being spaced apart from said first and second side surfaces, respectively, said pair of electrodes being provided on said pair of principal surfaces so as to supply injection current to said exciting region via said heterojunction interfaces to emit a light, said active layer further having non-exciting regions locating at least between said one end of said exciting region and said first side surface and between said other end of said exciting region and said second side surface and being transparent to said light emitted from said exciting region, the band gap of said exciting region being narrower than that of said non-exciting region, said crystal further including optical obstacles located at least between said non-exciting regions and said third side surface and between said non-exciting regions and said fourth side surface.
申请日期	1979-02-27
专利号	US4282494
专利状态	失效
申请号	US06/015839
公开（公告）号	US4282494
IPC 分类号	H01S5/20 \| H01S5/10 \| H01S5/00 \| H01S5/16 \| H01S5/042 \| H01S5/22 \| H01S3/19
专利代理人	-
代理机构	SUGHRUE, ROTHWELL, MION, ZINN AND MACPEAK
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46247
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, JAPAN
推荐引用方式 GB/T 7714	YONEZU, HIROO,UENO, MASAYASU. Stripe-geometry double heterojunction laser element. US4282494[P]. 1981-08-04.

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