Method of making a compound semiconductor laser

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	Method of making a compound semiconductor laser
其他题名	Method of making a compound semiconductor laser
	TURLEY, STEPHEN E. H.
	1985-01-29
专利权人	ITT INDUSTRIES INC 320 PARK AVE NY NY 10022 A CORP
公开日期	1985-01-29
授权国家	美国
专利类型	授权发明
摘要	In the manufacture of an InP/(In,Ga) (As,P) buried rib laser, the sides of the laser are profiled to have surfaces extending in {111} A planes down to the junction between the active and lower confining layers, and to have surfaces extending in other planes beneath this junction. In the subsequent epitaxial regrowth nucleation above this junction between the surfaces is discriminated against in favor of growth beneath this junction so that the regrowth up the sides of the rib is automatically temporarily arrested in the vicinity of this junction.
其他摘要	在InP /（In，Ga）（As，P）埋入式肋状激光器的制造中，激光器的侧面被成型为具有在{111} A平面中向下延伸到有源层和下限制层之间的结的表面，并使表面在该连接处下方的其他平面中延伸。在随后的外延再生中，在该表面之间的这种连接处的成核被区分为有利于在该连接处下方生长，使得肋的侧面再生长自动地暂时停止在该连接处附近。
主权项	A method of making a compound semiconductor buried rib heterostructure laser constructed in the InP/(In,Ga)(As,P) semiconductive system including the steps of growing by liquid phase epitaxy upon a semiconductive substrate three layers comprising an active layer sandwiched between upper and lower pasive layers of higher band gap and lower refractive index material than that of the active layer, of selectively etching through said active and passive layers to leave a protruding rib whose sides are profiled having regard to the crystal orientation such that in a subsequent step of epitaxial regrowth the nucleation on the sides of the rib at and above the active layer is discriminated against by said profile in favour of nucleation beneath said active layer whereby in said regrowth the regrowth up the sides of the rib is temporarily arrested in the vicinity of the junction between the active layer and the lower passive layer.
申请日期	1982-11-30
专利号	US4496403
专利状态	失效
申请号	US06/445618
公开（公告）号	US4496403
IPC 分类号	H01S5/227 \| H01S5/00 \| H01L21/208
专利代理人	-
代理机构	O'HALLORAN, JOHN T. SEITTER, ROBERT P.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46215
专题	半导体激光器专利数据库
作者单位	ITT INDUSTRIES INC 320 PARK AVE NY NY 10022 A CORP
推荐引用方式 GB/T 7714	TURLEY, STEPHEN E. H.. Method of making a compound semiconductor laser. US4496403[P]. 1985-01-29.

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