Semiconductor diode laser, and method of manufacturing thereof

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	Semiconductor diode laser, and method of manufacturing thereof
其他题名	Semiconductor diode laser, and method of manufacturing thereof
	WEEGELS, LEO M.; DE VRIEZE, HENRICUS M.; VERMEULEN-HARTJES, MARIA H. C.
	2000-06-20
专利权人	UNIPHASE OPTO HOLDINGS, INC.
公开日期	2000-06-20
授权国家	美国
专利类型	授权发明
摘要	A diode laser is disclosed that is self-pulsating without an increase in the starting current or a decrease in the efficiency. A special coating on an end face of the laser comprises in order a first mirror, a medium having an optical thickness which is at least substantially equal to an integer number of times half the wavelength of the generated electromagnetic radiation, and a second mirror. The coating comprises exclusively materials which have a higher bandgap value than that which corresponds to the wavelength of the generated radiation, while the reflectivities of the mirrors and the deviation of the optical thickness of the medium with respect to an integer number of times half the emission wavelength are chosen such that the group velocity dispersion (GVD) adjacent the wavelength of the generated electromagnetic radiation is negative, and preferably a minimum. Pulse widening owing to pulses arising from automatic mode locking is no longer possible due to a sufficiently negative group velocity dispersion. A laser exhibiting stable self-pulsation is thus provided.
其他摘要	公开了一种二极管激光器，其在不增加启动电流或降低效率的情况下是自脉动的。激光器端面上的特殊涂层包括第一反射镜，介质，其光学厚度至少基本上等于所产生的电磁辐射波长的一半的整数倍，以及第二反射镜。涂层仅包括具有比对应于所产生的辐射的波长的带隙值更高的带隙值的材料，而镜子的反射率和介质的光学厚度的偏差相对于发射的一半的整数倍。选择波长使得与产生的电磁辐射的波长相邻的群速度色散（GVD）是负的，并且优选地是最小的。由于足够负的群速度色散，不再可能由于自动模式锁定产生的脉冲而导致脉冲加宽。因此提供了一种表现出稳定的自脉动的激光器。
主权项	A semiconductor diode laser with a semiconductor body (100) comprising a substrate (1) and a semiconductor layer structure situated thereon with at least a first cladding layer (2) of a first conductivity type, a second cladding layer (4) of a second conductivity type opposed to the first, and an active layer (3) arranged therebetween, and comprising a pn junction which, given a sufficient current strength in the forward direction, is capable of generating coherent electromagnetic radiation in a strip-shaped active region which lies within a resonant cavity and forms part of the active layer (3), the first and the second cladding layer (2, 4) being provided with electrical connection means (7, 8), while the resonant cavity is bounded by end faces (50, 51) which are substantially perpendicular to the active region and of which at least one end face (51) is provided with a coating (20), the generated electromagnetic radiation issuing from the laser in the form of pulses during continuous operation of the laser, characterized in that the coating (20) comprises in that order a first mirror (21), a medium (22) having an optical thickness at least substantially equal to an integer number of times half the wavelength of the generated electromagnetic radiation, and a second mirror (23), said coating (20) comprising exclusively materials having a greater bandgap than that which corresponds to the wavelength of the generated radiation, while the reflectivity values of the mirrors and the deviation of the optical thickness of said medium from an integer number of times half the wavelength of the generated radiation are chosen such that the group velocity dispersion is negative adjacent the wavelength of the generated electromagnetic radiation.
申请日期	1997-12-11
专利号	US6078603
专利状态	失效
申请号	US08/988597
公开（公告）号	US6078603
IPC 分类号	H01S5/028 \| H01S5/00 \| H01S5/062 \| H01S5/10 \| H01S5/065 \| H01S5/02 \| H01S5/32 \| H01S3/19
专利代理人	-
代理机构	GLENN, MICHAEL A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46176
专题	半导体激光器专利数据库
作者单位	UNIPHASE OPTO HOLDINGS, INC.
推荐引用方式 GB/T 7714	WEEGELS, LEO M.,DE VRIEZE, HENRICUS M.,VERMEULEN-HARTJES, MARIA H. C.. Semiconductor diode laser, and method of manufacturing thereof. US6078603[P]. 2000-06-20.

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