Light emitting diode

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	Light emitting diode
其他题名	Light emitting diode
	SHEU, JINN-KONG; KUO, DANIEL; HSU, SAMUEL
	2004-03-30
专利权人	EPISTAR CORPORATION
公开日期	2004-03-30
授权国家	美国
专利类型	授权发明
摘要	A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.
其他摘要	在衬底上形成具有应变层超晶格（SLS）晶体结构的发光二极管。在基板上依次形成成核层和缓冲层，以便于后续晶体生长过程中的晶体生长。有源层覆盖在上包层和下包层之间。活性物质后来包括III-N族化合物半导体材料。 SLS接触层位于上包层上。透明电极稍后位于触点上以用作阳极。另一电极层与缓冲层接触，并与下包层和上包层分离。
主权项	A structure of light emitting diode, comprising: a substrate; a first electrode layer on a back side of the substrate; a first confinement layer, formed over an upper side of the substrate; an active layer, formed over the first confinement layer, wherein the active layer comprises a doped III-V group compound semiconductor; a second confinement layer, formed over the active layer; a contact layer, formed on the second confinement layer; a transparent conductive layer, formed over the contact layer; and a second electrode layer, formed on the transparent conductive layer.
申请日期	2003-01-16
专利号	US6712478
专利状态	授权
申请号	US10/346843
公开（公告）号	US6712478
IPC 分类号	H01L33/00 \| H01S5/00 \| H01S5/042 \| H01L33/04 \| H01L33/32 \| H01L27/15
专利代理人	-
代理机构	J. C. PATENTS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46174
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	SHEU, JINN-KONG,KUO, DANIEL,HSU, SAMUEL. Light emitting diode. US6712478[P]. 2004-03-30.

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