Unipolar semiconductor laser

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	Unipolar semiconductor laser
其他题名	Unipolar semiconductor laser
	CAPASSO, FEDERICO; CHO, ALFRED Y.; FAIST, JEROME; HUTCHINSON, ALBERT L.; LURYI, SERGE; SIRTORI, CARLO; SIVCO, DEBORAH L.
	1995-10-10
专利权人	AT&T IPM CORP.
公开日期	1995-10-10
授权国家	美国
专利类型	授权发明
摘要	This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 mu m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.
其他摘要	在我们所知的情况下，该申请公开了第一单极激光器。激光器的示例性实施例在GaInAs / AlInAs系统中实现，并发射约4.2μm波长的辐射。其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。我们已经将激光器指定为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，该多层半导体结构包括多个基本相同的无效“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与相邻的有源区域分离。在当前优选的实施例中，每个有源区包括三个耦合的量子阱，其被设计成便于实现粒子数反转。在当前优选的实施例中，能量弛豫区域是数字渐变的间隙区域。然而，其他能量弛豫区域也是可能的。单极激光器中的单极等离子体可以通过电“控制”场来操纵，便于例如光束控制或外部控制激光器的模态增益。讨论了实现这一目的的手段。
主权项	An article comprising a unipolar semiconductor laser, said laser comprising a) a multilayer semiconductor structure that comprises doped semiconductor material of only a first conductivity type; and b) means for applying a voltage across said multilayer semiconductor structure; characterized in that c) said multilayer structure comprises a multiplicity of essentially identical active regions, a given of said active regions being separated from an adjoining active region by an energy relaxation region; d) said active region comprises two or more coupled quantum wells, associated with said coupled quantum wells being at least second and third energy states for charge carriers of the first conductivity type, with said third energy state being higher than said second energy state, associated with said energy states being, respectively, second and third wavefunctions, said active region selected to provide reduced spatial overlap between said third and second wavefunctions; e) said energy relaxation region is selected to provide for substantial energy relaxation of charge carriers of the first given conductivity type in the energy relaxation region when a normal operating voltage is applied, at least some of said charge carriers being introduced into the energy relaxation region from said active region; and f) at least some of the charge carriers of the first conductivity type undergo a radiative transition from the third to the second energy state.
申请日期	1994-04-04
专利号	US5457709
专利状态	失效
申请号	US08/223341
公开（公告）号	US5457709
IPC 分类号	H01S5/34 \| H01S5/00 \| H01S3/106 \| H01S5/062 \| H01S5/12 \| H01S3/19
专利代理人	-
代理机构	PACHER, EUGEN E.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46163
专题	半导体激光器专利数据库
作者单位	AT&T IPM CORP.
推荐引用方式 GB/T 7714	CAPASSO, FEDERICO,CHO, ALFRED Y.,FAIST, JEROME,et al. Unipolar semiconductor laser. US5457709[P]. 1995-10-10.

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