Nitride semiconductor light-emitting device

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	Nitride semiconductor light-emitting device
其他题名	Nitride semiconductor light-emitting device
	YOSHIDA, SHINJI; ORITA, KENJI; HASEGAWA, YOSHIAKI; MOCHIDA, ATSUNORI
	2013-05-07
专利权人	PANASONIC CORPORATION
公开日期	2013-05-07
授权国家	美国
专利类型	授权发明
摘要	A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
其他摘要	氮化物半导体器件包括由III族氮化物半导体制成并具有发光面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂层膜。第一涂膜是由含铝的氮化物制成的结晶膜。结晶膜由一组单畴组成，单畴由一组晶粒组成，晶粒的晶体取向面具有相同的倾斜角和相同的旋转角。每单位面积的畴之间的边界长度为7μm-1或更小。
主权项	A nitride semiconductor light-emitting device, comprising: a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet; and a first protection film formed to cover the light-emitting facet of the multilayer semiconductor structure, wherein the first protection film is a crystalline film made of a nitride containing aluminum, the crystalline film is comprised of a group of single domains, the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle, and a length of a boundary between the domains per unit area is 7 μm−1 or less.
申请日期	2011-11-11
专利号	US8437376
专利状态	授权
申请号	US13/294682
公开（公告）号	US8437376
IPC 分类号	H01S5/00
专利代理人	-
代理机构	MCDERMOTT WILL & EMERY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46158
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	YOSHIDA, SHINJI,ORITA, KENJI,HASEGAWA, YOSHIAKI,et al. Nitride semiconductor light-emitting device. US8437376[P]. 2013-05-07.

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