Integrated semiconductor laser suitable for liquid-phase growth and method of fabricating same

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	Integrated semiconductor laser suitable for liquid-phase growth and method of fabricating same
其他题名	Integrated semiconductor laser suitable for liquid-phase growth and method of fabricating same
	FURUKAWA, RYOZO OKI ELECTRIC INDUSTRY CO., LTD.; SHINOZAKI, KEISUKE OKI ELECTRIC INDUSTRY CO., LTD.; FUKUNAGA, TOSHIAKI OKI ELECTRIC INDUSTRY CO., LTD.
	1993-11-10
专利权人	OKI ELECTRIC INDUSTRY COMPANY, LIMITED
公开日期	1993-11-10
授权国家	欧洲专利局
专利类型	授权发明
摘要	An integrated phase-locked semiconductor laser wherein a plurality of waveguide paths extend in parallel to each other. A current blocking layer (2) is formed on one of opposite major surfaces of a semiconductor substrate (1) and is divided into a plurality of regions by a plurality of stripe-like channels (11). Each of the channels (11) has a depth which reaches at least the above-mentioned major surface of the substrate (1). A first cladding layer (3) covers the surface of the current blocking layer (2) and those regions of the substrate (1) which are exposed to the channels (11). A waveguide layer (4) is deposited on the first cladding layer (3) and has a surface opposite to the first cladding layer (3) which is substantially flat. An active layer (5), a reflecting layer (6), a second cladding layer (7) and a cap layer (8) are deposited one upon another on the waveguide layer (4). The waveguide layer (4) has an effective refractive index which sequentially decreases in the order of first regions (4-1) individually associated with the plurality of channels (11), second regions (4-2) individually associated with interchannel regions each intervening between nearby channels (11), and third regions (4-3) located at opposite sides of the plurality of channels (11) relatively to each other.
其他摘要	一种集成锁相半导体激光器，其中多个波导路径彼此平行地延伸。电流阻挡层（2）形成在半导体衬底（1）的相对主表面之一上，并通过多个条状通道（11）分成多个区域。每个通道（11）的深度至少达到基板（1）的上述主表面。第一包层（3）覆盖电流阻挡层（2）的表面和衬底（1）的暴露于沟道（11）的那些区域。波导层（4）沉积在第一包层（3）上，并具有与第一包层（3）相对的表面，该表面基本上是平的。在波导层（4）上一个接一个地沉积有源层（5），反射层（6），第二包层（7）和盖层（8）。波导层（4）具有有效折射率，该有效折射率按照与多个通道（11）分别相关联的第一区域（4-1）的顺序依次减小，第二区域（4-2）分别与每个介入的通道间区域相关联。在附近的通道（11）和位于多个通道（11）的相对侧的第三区域（4-3）之间相对于彼此。
主权项	An integrated phase-locked semiconductor laser wherein a plurality of waveguide paths extend in parallel to each other, comprising: a semiconductor substrate (1); a current blocking layer (2) formed on one of opposite major surfaces of said semiconductor substrate (1), said current blocking layer (2) being divided into a plurality of regions by a plurality of stripe-like channels (11) each having a lower end reaching at least said one major surface of said semiconductor substrate (1); a first cladding layer (3) covering a surface of said current blocking layer (2) and regions of said semiconductor substrate (1) which are exposed to the channels (11); an active layer (5) formed above said first cladding layer (3); a second cladding layer (7) formed above said active layer (5); and a cap layer (8) formed on said second cladding layer (7); a waveguide layer (4) formed between said first cladding layer (3) and said active layer (5) and having a surface opposite to said first cladding layer (3) which is substantially flat; and characterized by a reflecting layer (6) formed between said active layer (5) and said second cladding layer (7); said waveguide layer (4) having an effective refractive index which sequentially decreases in the order of first regions (4-1) individually associated with the plurality of channels (11), second regions (4-2) individually associated with interchannel regions each intervening between nearby ones of said channels (11), and third regions (4-3) located at opposite sides of said plurality of channels (11) relatively to each other.
申请日期	1989-07-20
专利号	EP0351839B1
专利状态	失效
申请号	EP1989113325
公开（公告）号	EP0351839B1
IPC 分类号	H01S5/00 \| H01S5/24 \| H01S5/40 \| H01S3/25 \| H01L33/00 \| H01S3/19
专利代理人	-
代理机构	BETTEN & RESCH
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46142
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC INDUSTRY COMPANY, LIMITED
推荐引用方式 GB/T 7714	FURUKAWA, RYOZO OKI ELECTRIC INDUSTRY CO., LTD.,SHINOZAKI, KEISUKE OKI ELECTRIC INDUSTRY CO., LTD.,FUKUNAGA, TOSHIAKI OKI ELECTRIC INDUSTRY CO., LTD.. Integrated semiconductor laser suitable for liquid-phase growth and method of fabricating same. EP0351839B1[P]. 1993-11-10.