Optical semiconductor device and pumping light source for optical fiber amplifier

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	Optical semiconductor device and pumping light source for optical fiber amplifier
其他题名	Optical semiconductor device and pumping light source for optical fiber amplifier
	YOSHIDA, JUNJI; TSUKIJI, NAOKI; TANIGUCHI, HIDEHIRO; IRINO, SATOSHI; ITOH, HIROKAZU; IKEDA, HARUNOBU; KOBAYAKAWA, MASAKO; KASUKAWA, AKIHIKO
	2013-02-26
专利权人	FURUKAWA ELECTRIC CO., LTD
公开日期	2013-02-26
授权国家	美国
专利类型	授权发明
摘要	A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.
其他摘要	形成本发明的半导体器件，使得n型InP电流阻挡层进入p型InP包层的内部，即，n型电流阻挡层越过p型InP包层的上部。因此，构成电流阻挡区域的n型InP电流阻挡层之间的距离窄于与n型InP电流阻挡层接触的p型覆层的宽度。因此，可以容易地制造可以减小电流阻挡区域中的漏电流的半导体器件，其允许高输出和高温操作。
主权项	An optical semiconductor device, comprising: a semiconductor substrate; a first cladding layer formed on one flat surface of said semiconductor substrate, an active layer formed on said first cladding layer; a second cladding layer formed on said active layer;said first cladding layer, said active layer and said second cladding layer being formed as a mesa-shape structure, first current blocking layers of a first conductive type formed on said first cladding layer, said active layer and a part of said second cladding layer at both side surfaces of said mesa-shape structure; and second current blocking layers of a second conductive type formed as covering said first current blocking layers; wherein upper surfaces of said second current blocking layers are same or substantially same as an upper surface of said second cladding layer, andsaid second current blocking layers are formed as films deposited at a deposition temperature T satisfying that the following formula is negative regarding said deposition temperature T of said second current blocking layer, and have a structure wherein end portions of said upper surfaces of said second current blocking layers extend over said first current blocking layer, and ride over said second cladding layer so as to enter the inside of said second cladding layer by the mass-transport phenomenon W1−W2 (μm)=−0.0092×T+6.18, where, W1 is a distance between said end portions of said second current blocking layers and W2 is a width between said first current blocking layers contacting said second cladding layer.
申请日期	2010-01-07
专利号	US8385379
专利状态	授权
申请号	US12/683676
公开（公告）号	US8385379
IPC 分类号	H01S5/00
专利代理人	-
代理机构	TUROCY & WATSON, LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46140
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD
推荐引用方式 GB/T 7714	YOSHIDA, JUNJI,TSUKIJI, NAOKI,TANIGUCHI, HIDEHIRO,et al. Optical semiconductor device and pumping light source for optical fiber amplifier. US8385379[P]. 2013-02-26.

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