Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate

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	Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate
其他题名	Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate
	AMANN, MARKUS-CHRISTIAN; MAHLEIN, HANS F.; STEGMUELLER, BERNHARD; THULKE, WOLFGANG; WINZER, GERHARD; WOLFF, ULRICH
	1987-04-07
专利权人	SIEMENS AKTIENGESELLSCHAFT
公开日期	1987-04-07
授权国家	美国
专利类型	授权发明
摘要	A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.
其他摘要	一种在基板上集成DFB激光器和无源带状波导的方法。在第一外延步骤中产生层堆叠，该层堆叠在最上层上具有激光活性层和表面宽的光栅，并且在区域方面侵蚀堆叠，但是仅在激光活化下的层下面通过蚀刻产生将激光区域与无源条带波导区域分开的步骤，而不是向下到衬底。通过采用蚀刻停止层，蚀刻可以自我调节，并且激光活性层和无源条带波导区域之间的耦合不是通过端部耦合而是通过表面耦合发生的。完整制造结构仅需要两个外延步骤，并且可以在相同的单个方法步骤中生产用于定义激光器和波导所需的条带。
主权项	An integrated structure on a substrate comprising in sequence: a first layer disposed above and closest to said substrate; a laser-active layer disposed above and partially overlapping said first layer; a second layer disposed adjacent and coextensive with said laser-active layer and having an upper surface with a grating therein; a third layer disposed adjacent said second layer and partially overlapping said first layer beyond said laser-active layer; a fourth layer disposed adjacent and coextensive with said third layer; said laser-active layer, said second layer, said third layer and said fourth layer forming a transverse strip structure above said first layer operable as a laser; and said substrate, said laser-active layer and said third layer having a higher refractive index than said first layer, said laser-active layer being disposed close enough to said first layer to establish optical coupling therebetween, and said first layer having a selective thickness such that said first layer is operable as a strip waveguide.
申请日期	1985-12-23
专利号	US4656636
专利状态	失效
申请号	US06/810611
公开（公告）号	US4656636
IPC 分类号	H01S5/12 \| H01S5/00 \| H01S5/323 \| H01S5/026 \| H01S5/10 \| H01S5/223 \| H01S3/19 \| H01L21/00 \| H01L21/306 \| B44C1/22
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46117
专题	半导体激光器专利数据库
作者单位	SIEMENS AKTIENGESELLSCHAFT
推荐引用方式 GB/T 7714	AMANN, MARKUS-CHRISTIAN,MAHLEIN, HANS F.,STEGMUELLER, BERNHARD,et al. Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate. US4656636[P]. 1987-04-07.

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