Multiple quantum well device

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	Multiple quantum well device
其他题名	Multiple quantum well device
	TRUSCOTT, WILLIAM S.
	1997-02-25
专利权人	THE UNIVERSITY OF MANCHESTER INSTITUTE OF SCIENCE & TECHNOLOGY
公开日期	1997-02-25
授权国家	美国
专利类型	授权发明
摘要	PCT No. PCT/GB94/00406 Sec. 371 Date Nov. 2, 1995 Sec. 102(e) Date Nov. 2, 1995 PCT Filed Mar. 2, 1994 PCT Pub. No. WO94/20990 PCT Pub. Date Sep. 15, 1994A quantum well device has an active region adapted to pass a tunneling current of charge carriers and comprising layers of material forming alternating potential barriers and potential wells. The structure defines, in use, a first potential well at one end of the active region, said first potential well defining a first quasi-defined energy level, and to further define second and third quasi-defined energy levels. The relative heights and thicknesses of the potential barriers when the device is in use are structured so that the first quasi-defined energy level has a longer lifetime than the second and third quasi-defined energy levels and there is a degree of coupling between the three quasi-defined energy levels which is strongest between the second and third quasi-defined energy levels. The transmission coefficient through the active region shows a resonance peak at each of the energies of the three quasi-defined energy levels. The transmission peak at the energy of the first quasi-defined energy level is greater than the transmission peaks at the energies of the second and third quasi-defined energy levels, respectively, and when in use, the energy of the first quasi-defined energy level lies between the energies of the second and third quasi-defined energy levels but is greater or less than the average of the energies of the second and third quasi-defined energy levels.
其他摘要	PCT No. PCT / GB94 / 00406 Sec。 371日期1995年11月2日102（e）日期1995年11月2日PCT提交1994年3月2日PCT Pub。 No. WO94 / 20990 PCT Pub。 1994年9月15日。量子阱装置具有适于传递电荷载流子的隧穿电流并包括形成交替势垒和势阱的材料层的有源区。在使用中，该结构在有源区的一端限定第一势阱，所述第一势阱限定第一准限定能级，并进一步限定第二和第三准限定能级。设备使用时势垒的相对高度和厚度的结构使得第一个准定义的能级比第二个和第三个具有更长的寿命。准定义的能级并且在三个准定义的能级之间存在一定程度的耦合，其在第二和第三准定义的能级之间最强。通过有源区的透射系数在三个准限定能级的每个能量处显示共振峰。第一准定义能级的能量处的透射峰值分别大于第二和第三准限定能量能量处的透射峰值，并且在使用时，第一准定义能量的能量。水平位于第二和第三准定义能量水平的能量之间但是大于或小于第二和第三准定义能量的能量的平均值水平。
主权项	A quantum well device having an active region adapted in use to pass a tunnelling current of charge carriers, the active region comprising layers of material forming alternating potential barriers and potential wells arranged so as to define a first potential .well at one end of the active region having regard to the direction of flow of the tunnelling current and a further structure comprising at least a second potential well, said first potential well defining a first quasi-defined energy level and the further structure defining second and third quasi-defined energy levels, the relative heights and thicknesses of the potential barriers when the device is in use being structured so that the first quasi-defined energy level has a longer lifetime than the second and third quasi-defined energy levels and there is a degree of coupling between the three quasi-defined energy levels which is strongest between the second and third quasi-defined energy levels, the arrangement being such that the transmission coefficient through the active region shows a resonance peak at each of the energies of the three quasi-defined energy levels, the first resonance peak at the energy of the first quasi-defined energy level being greater than the second and third resonance peaks at the energies of the second and third quasi-defined energy levels respectively, and that when the tunneling current is flowing the energy of the first quasi-defined energy level lies between the energies of the second and third quasi-defined energy levels but is one of greater and less than an average of the energies of the second and third energy levels, and such that on application of an A.C. field to the device an alternating current will flow which increases when the frequency of the applied A.C. field corresponds to an energy difference between the first quasi-defined energy levels as a result of a coupling between the first resonance peak and both the second and third resonance peaks.
申请日期	1994-03-02
专利号	US5606175
专利状态	失效
申请号	US08/513836
公开（公告）号	US5606175
IPC 分类号	H01L29/02 \| H01L29/15 \| H01L31/0352 \| H01L31/0248 \| H01S5/34 \| H01S5/00 \| H01L29/06 \| H01L31/0328 \| H01L31/0336
专利代理人	-
代理机构	SKJERVEN,MORRILL,MACPHERSON,FRANKLIN & FRIEL,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46068
专题	半导体激光器专利数据库
作者单位	THE UNIVERSITY OF MANCHESTER INSTITUTE OF SCIENCE & TECHNOLOGY
推荐引用方式 GB/T 7714	TRUSCOTT, WILLIAM S.. Multiple quantum well device. US5606175[P]. 1997-02-25.

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