Ridge-structure DFB semiconductor laser and method of manufacturing the same

OPT OpenIR > 半导体激光器专利数据库

	Ridge-structure DFB semiconductor laser and method of manufacturing the same
其他题名	Ridge-structure DFB semiconductor laser and method of manufacturing the same
	TAKEI, KIYOSHI; CHEN, NONG; WATANABE, YOSHIAKI; CHIKUMA, KIYOFUMI
	2003-03-25
专利权人	PIONEER CORPORATION
公开日期	2003-03-25
授权国家	美国
专利类型	授权发明
摘要	A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.
其他摘要	提供脊结构DFB半导体激光器和制造激光器的方法的描述，其中可以避免形成在光栅上的金属电极的光吸收损耗。DFB半导体激光器包括：从包层的平坦部分突出的脊，其形成在有源层上，脊包括包层和顺序形成在有源层上的接触层;多个金属条，沿脊的纵向具有预定的周期性，并从至少一个平坦部分的表面延伸到脊的顶部;以及在脊的顶部处的多个金属条上形成的绝缘层。
主权项	A method of manufacturing a ridge-structure DFB semiconductor laser, comprising the steps of: sequentially forming an active layer, a cladding layer and a contact layer on a substrate; partially removing said cladding layer and said contact layer to a predetermined depth to form flat portions and a ridge protruding from said flat portions; forming a plurality of metal strips having a predetermined periodicity along a longitudinal direction of said ridge and extending from a surface of at least one of said flat portions to a top of said ridge; forming an insulating layer on said plurality of metal strips, said at least one of said flat portions and the top of said ridge; removing a portion of said insulating layer on said at least one of said flat portions; and forming an electrode electrically connected to said plurality of metal strips.
申请日期	2002-01-02
专利号	US6537841
专利状态	失效
申请号	US10/032506
公开（公告）号	US6537841
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/343 \| H01S5/22 \| H01S5/12 \| H01L21/00
专利代理人	-
代理机构	SUGHRUE MION,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/46059
专题	半导体激光器专利数据库
作者单位	PIONEER CORPORATION
推荐引用方式 GB/T 7714	TAKEI, KIYOSHI,CHEN, NONG,WATANABE, YOSHIAKI,et al. Ridge-structure DFB semiconductor laser and method of manufacturing the same. US6537841[P]. 2003-03-25.