Xi'an Institute of Optics and Precision Mechanics,CAS
Ridge-structure DFB semiconductor laser and method of manufacturing the same | |
其他题名 | Ridge-structure DFB semiconductor laser and method of manufacturing the same |
TAKEI, KIYOSHI; CHEN, NONG; WATANABE, YOSHIAKI; CHIKUMA, KIYOFUMI | |
2003-03-25 | |
专利权人 | PIONEER CORPORATION |
公开日期 | 2003-03-25 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge. |
其他摘要 | 提供脊结构DFB半导体激光器和制造激光器的方法的描述,其中可以避免形成在光栅上的金属电极的光吸收损耗。DFB半导体激光器包括:从包层的平坦部分突出的脊,其形成在有源层上,脊包括包层和顺序形成在有源层上的接触层;多个金属条,沿脊的纵向具有预定的周期性,并从至少一个平坦部分的表面延伸到脊的顶部;以及在脊的顶部处的多个金属条上形成的绝缘层。 |
主权项 | A method of manufacturing a ridge-structure DFB semiconductor laser, comprising the steps of: sequentially forming an active layer, a cladding layer and a contact layer on a substrate; partially removing said cladding layer and said contact layer to a predetermined depth to form flat portions and a ridge protruding from said flat portions; forming a plurality of metal strips having a predetermined periodicity along a longitudinal direction of said ridge and extending from a surface of at least one of said flat portions to a top of said ridge; forming an insulating layer on said plurality of metal strips, said at least one of said flat portions and the top of said ridge; removing a portion of said insulating layer on said at least one of said flat portions; and forming an electrode electrically connected to said plurality of metal strips. |
申请日期 | 2002-01-02 |
专利号 | US6537841 |
专利状态 | 失效 |
申请号 | US10/032506 |
公开(公告)号 | US6537841 |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S5/343 | H01S5/22 | H01S5/12 | H01L21/00 |
专利代理人 | - |
代理机构 | SUGHRUE MION,PLLC |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/46059 |
专题 | 半导体激光器专利数据库 |
作者单位 | PIONEER CORPORATION |
推荐引用方式 GB/T 7714 | TAKEI, KIYOSHI,CHEN, NONG,WATANABE, YOSHIAKI,et al. Ridge-structure DFB semiconductor laser and method of manufacturing the same. US6537841[P]. 2003-03-25. |
条目包含的文件 | 条目无相关文件。 |
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